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BAS40LT1

SCHOTTKYBARRIERDIODES

TheseSchottkybarrierdiodesaredesignedforhighspeedswitchingapplications,circuitprotection,andvoltageclamping.Extremelylowforwardvoltagereducesconductionloss.Miniaturesurfacemountpackageisexcellentforhandheldandportableapplicationswherespaceislimited. Features

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

BAS40LT1

CASE318-08,STYLE8SOT-23TO-236AB

SchottkyBarrierDiodes TheseSchottkybarrierdiodesaredesignedforhighspeedswitchingapplications,circuitprotection,andvoltageclamping.Extremelylowforwardvoltagereducesconductionloss.Miniaturesurfacemountpackageisexcellentforhandheldandportableapplicationswherespa

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

BAS40LT1

SchottkyBarrierDiode

SchottkyBarrierDiode TheseSchottkybarrierdiodesaredesignedforhighspeedswitchingapplications,circuitprotection,andvoltageclamping.Extremelylowforwardvoltagereducesconductionloss.Miniaturesurfacemountpackageisexcellentforhandheldandportableapplicationswherespac

LRCLeshan Radio Company

樂山無(wú)線電樂山無(wú)線電股份有限公司

BAS40LT1G

SCHOTTKYBARRIERDIODES

TheseSchottkybarrierdiodesaredesignedforhighspeedswitchingapplications,circuitprotection,andvoltageclamping.Extremelylowforwardvoltagereducesconductionloss.Miniaturesurfacemountpackageisexcellentforhandheldandportableapplicationswherespaceislimited. Features

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

BAS40LT1G

SchottkyBarrierDiodes

TheseSchottkybarrierdiodesaredesignedforhighspeedswitchingapplications,circuitprotection,andvoltageclamping.Extremelylowforwardvoltagereducesconductionloss.Miniaturesurfacemountpackageisexcellentforhandheldandportableapplicationswherespaceislimited. Features

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

BAS40LT1G

SchottkyBarrierDiodes

TheseSchottkybarrierdiodesaredesignedforhighspeedswitchingapplications,circuitprotection,andvoltageclamping.Extremelylowforwardvoltagereducesconductionloss.Miniaturesurfacemountpackageisexcellentforhandheldandportableapplicationswherespaceislimited. Features

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

BAS40LT1G

SchottkyBarrierDiodes

TheseSchottkybarrierdiodesaredesignedforhighspeedswitching applications,circuitprotection,andvoltageclamping.Extremelylow forwardvoltagereducesconductionloss.Miniaturesurfacemount packageisexcellentforhandheldandportableapplicationswhere spaceislimited. Featu

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

LBAS40LT1

SCHOTTKYBARRIER(DOUBLE)DIODE

DESCRIPTION PlanarSchottkybarrierdiodeswithanintegratedguardringforstressprotection. Features ●Lowforwardcurrent ●Guardringprotected ●Lowdiodecapacitance. APPLICATIONS ●Ultrahigh-speedswitching ●Voltageclamping ●Protectioncircuits. ●Blockingdiodes.

LRCLeshan Radio Company

樂山無(wú)線電樂山無(wú)線電股份有限公司

LBAS40LT1G

SchottkyBARRIERDIODE

DESCRIPTION PlanarSchottkybarrierdiodeswithanintegratedguardringforstressprotection. WedeclarethatthematerialofproductcompliancewithRoHSrequirements. Features ●Lowforwardcurrent ●Guardringprotected ●Lowdiodecapacitance. APPLICATIONS ●Ultrahigh-speedswitchin

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯電子上海雷卯電子科技有限公司

LBAS40LT1G

SCHOTTKYBARRIERDIODELowforwardcurrent

LRCLeshan Radio Company

樂山無(wú)線電樂山無(wú)線電股份有限公司

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