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BAS70-04LT1

DualSeriesSchottkyBarrierDiode

TheseSchottkybarrierdiodesaredesignedforhighspeedswitchingapplications,circuitprotection,andvoltageclamping.Extremelylowforwardvoltagereducesconductionloss.Miniaturesurfacemountpackageisexcellentforhandheldandportableapplicationswherespaceislimited. ?Ex

LRCLeshan Radio Company

樂(lè)山無(wú)線電樂(lè)山無(wú)線電股份有限公司

BAS70-04LT1

SCHOTTKYBARRIERDIODES

TheseSchottkybarrierdiodesaredesignedforhighspeedswitchingapplications,circuitprotection,andvoltageclamping.Extremelylowforwardvoltagereducesconductionloss.Miniaturesurfacemountpackageisexcellentforhandheldandportableapplicationswherespaceislimited. ?Ex

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

BAS70-04LT1

DualSeriesSchottkyBarrierDiode

TheseSchottkybarrierdiodesaredesignedforhighspeedswitchingapplications,circuitprotection,andvoltageclamping.Extremelylowforwardvoltagereducesconductionloss.Miniaturesurfacemountpackageisexcellentforhandheldandportableapplicationswherespaceislimited. Feat

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

BAS70-04LT1G

DualSeriesSchottkyBarrierDiode

TheseSchottkybarrierdiodesaredesignedforhighspeedswitchingapplications,circuitprotection,andvoltageclamping.Extremelylowforwardvoltagereducesconductionloss.Miniaturesurfacemountpackageisexcellentforhandheldandportableapplicationswherespaceislimited. Feat

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

BAS70-04LT1G

DualSeriesSchottkyBarrierDiode

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

BAS70-04LT1G

DualSeriesSchottkyBarrierDiode

TheseSchottkybarrierdiodesaredesignedforhighspeedswitchingapplications,circuitprotection,andvoltageclamping.Extremelylowforwardvoltagereducesconductionloss.Miniaturesurfacemountpackageisexcellentforhandheldandportableapplicationswherespaceislimited. Feat

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

BAS70-04LT1G

SchottkyBarrierDiode

TheseSchottkybarrierdiodesaredesignedforhighspeedswitching applications,circuitprotection,andvoltageclamping.Extremelylow forwardvoltagereducesconductionloss.Miniaturesurfacemount packageisexcellentforhandheldandportableapplicationswhere spaceislimited. Featu

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

BAS70-04LT1G

SchottkyBarrierDiode

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

LBAS70-04LT1G

SCHOTTKYBARRIERDIODELowforwardcurrent

DESCRIPTION PlanarSchottkybarrierdiodeswithanintegratedguardringforstressprotection.Singlediodesanddoublediodeswithdifferentpinningareavailable. WedeclarethatthematerialofproductcompliancewithRoHSrequirements. Features ●Lowforwardcurrent ●Highbreakdownvolta

LRCLeshan Radio Company

樂(lè)山無(wú)線電樂(lè)山無(wú)線電股份有限公司

SBAS70-04LT1G

SchottkyBarrierDiode

TheseSchottkybarrierdiodesaredesignedforhighspeedswitching applications,circuitprotection,andvoltageclamping.Extremelylow forwardvoltagereducesconductionloss.Miniaturesurfacemount packageisexcellentforhandheldandportableapplicationswhere spaceislimited. Featu

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

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