描述 Description

The L6491 is a high voltage device manufactured with the BCD6 “OFF-LINE” technology. It is a single-chip half-bridge gate driver for N-channel power MOSFET or IGBT.

The high-side (floating) section is designed to stand a voltage rail up to 600 V. The logic inputs are CMOS/TTL compatible down to 3.3 V for easy interfacing microcontroller/DSP.

An integrated comparator is available for fast protection against over-current, over-temperature, etc.

特性 Features

? High voltage rail up to 600 V
? dV/dt immunity ± 50 V/ns in full temperature range
? Driver current capability: 4 A source/sink
? Switching times 15 ns rise/fall with 1 nF load
? 3.3 V, 5 V TTL/CMOS inputs with hysteresis
? Integrated bootstrap diode
? Comparator for fault protections
? Smart shutdown function
? Adjustable deadtime
? Interlocking function
? Compact and simplified layout
? Bill of material reduction
? Effective fault protection
? Flexible, easy and fast design

簡介

L6491屬于集成電路（IC）的柵極驅(qū)動器。由制造生產(chǎn)的L6491柵極驅(qū)動器柵極驅(qū)動器電源管理集成電路 (PMIC) 可用于提供隔離、放大、參考位移、自舉或其他必要功能，這些功能可將來自電源轉(zhuǎn)換應(yīng)用中控制設(shè)備的信號連接到電源被控制通過的半導(dǎo)體設(shè)備（通常為 FET 或 IGBT）。任何特定設(shè)備提供的確切功能各不相同，但與它適合驅(qū)動的半導(dǎo)體配置相關(guān)。