最新无码a∨在线观看,一本av高清一区二区三区,亚洲熟妇色l20p,宅男噜噜69av,中出あ人妻熟女中文字幕

型號：2SC1623；Package：SOT-23；Silicon Epitaxial Planar Transistor

FEATURES ● High DC current gain:hFE=200TYP (VCE=6.0V,IC=1.0mA) ● High Voltage:VCEO=50V APPLICATIONS ● NPN Silicon Epitaxial Planar Transistor ● Audio frequency general purpose amplifier.

文件：203.59 Kbytes 頁數(shù)：4 Pages

BILIN

銀河微電

型號：2SC1623；Package：SOT-23；Silicon Epitaxial Planar Transistor

FEATURES ● High DC current gain:hFE=200TYP (VCE=6.0V,IC=1.0mA) ● High Voltage:VCEO=50V APPLICATIONS ● NPN Silicon Epitaxial Planar Transistor ● Audio frequency general purpose amplifier.

文件：2.34324 Mbytes 頁數(shù)：4 Pages

SKTECHNOLGYSHIKE Electronics

時(shí)科廣東時(shí)科微實(shí)業(yè)有限公司

型號：2SC1623；Package：SOT-23；SOT-23 Plastic-Encapsulate Transistors

FEATURES * High DC current gain :hFE=200(Typ) VCE=6V,IC=1mA * High voltage:VCEO=50V

文件：557.06 Kbytes 頁數(shù)：3 Pages

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺半導(dǎo)體廣東友臺半導(dǎo)體有限公司

型號：2SC1623-L4；Package：SOT-23；NPN Transistors

Features ● High DC Current Gain: hFE = 200 TYP. VCE = 6.0 V, IC = 1.0 mA ● High Voltage: VCE O = 50 V

文件：577.82 Kbytes 頁數(shù)：3 Pages

YFWDIODE

佑風(fēng)微電子

型號：2SC1623W；Package：SOT-323；NPN Silicon Epitaxial Planar Transistor

FEATURES ● High DC current gain: hFE=200TYP. ● High voltage: VCEO=50V. ● Power dissipation.(PC=200mW) APPLICATIONS ● Audio frequency general purpose amplifier.

文件：193.08 Kbytes 頁數(shù)：4 Pages

BILIN

銀河微電

型號：2SC4177L4；Package：SOT-323；NPN Plastic-Encapsulate Transistors

FEATURES ? High DC Current Gain ? Complementary to 2SA1611 ? High Voltage APPLICATIONS ? General Purpose Amplification

文件：681.24 Kbytes 頁數(shù)：3 Pages

SKTECHNOLGYSHIKE Electronics

時(shí)科廣東時(shí)科微實(shí)業(yè)有限公司

型號：B0540LW；Package：SOD-123S；0.5A Surface Mount Schottky Barrier Rectifiers

■ Features ? Low profile surface mounted application in order to optimize board space. ? Low power loss, high efficiency. ? High current capability, low forward voltage drop. ? Ultra high-speed switching. ? Silicon epitaxial planar chip, metal silicon junction. ? Suffix G indicates Halogen-f

文件：90.09 Kbytes 頁數(shù)：3 Pages

CITC

竹懋科技

型號：B120LW-S；Package：SOD-123S；1A Surface Mount Schottky Barrier Rectifiers

■ Features ? Low profile surface mounted application in order to optimize board space. ? Low power loss, high efficiency. ? High current capability, low forward voltage drop. ? Ultra high-speed switching. ? Silicon epitaxial planar chip, metal silicon junction. ? Suffix G indicates Halogen-f

文件：90.96 Kbytes 頁數(shù)：3 Pages

CITC

竹懋科技

型號：B120LW-S；Package：SOD-123S；1A Surface Mount Schottky Barrier Rectifiers

■ Features ? Low profile surface mounted application in order to optimize board space. ? Low power loss, high efficiency. ? High current capability, low forward voltage drop. ? Ultra high-speed switching. ? Silicon epitaxial planar chip, metal silicon junction. ? Suffix G indicates Halogen-f

文件：90.96 Kbytes 頁數(shù)：3 Pages

CITC

竹懋科技

型號：B120LW-ST；Package：SOD-123ST；1A Surface Mount Schottky Barrier Rectifiers

■ Features ? Low profile surface mounted application in order to optimize board space. ? Low power loss, high efficiency. ? High current capability, low forward voltage drop. ? Ultra high-speed switching. ? Silicon epitaxial planar chip, metal silicon junction. ? Suffix G indicates Halogen-f

文件：91.99 Kbytes 頁數(shù)：3 Pages

CITC

竹懋科技