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首頁(yè)>L160DT90VF>規(guī)格書詳情

L160DT90VF中文資料超威半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書

L160DT90VF
廠商型號(hào)

L160DT90VF

功能描述

16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory

文件大小

1.66624 Mbytes

頁(yè)面數(shù)量

52 頁(yè)

生產(chǎn)廠商

AMD

中文名稱

超威半導(dǎo)體

網(wǎng)址

網(wǎng)址

數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-9-1 11:48:00

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L160DT90VF規(guī)格書詳情

GENERAL DESCRIPTION

The Am29LV160D is a 16 Mbit, 3.0 Volt-only Flash memory organized as 2,097,152 bytes or 1,048,576 words. The device is offered in 48-ball FBGA, 44-pin SO, and 48-pin TSOP packages. The word-wide data (x16) appears on DQ15–DQ0; the byte-wide (x8) data appears on DQ7–DQ0. This device is designed to be programmed in-system with the standard system 3.0 volt VCC supply. A 12.0 V VPP or 5.0 VCC are not required for write or erase operations. The device can also be programmed in standard EPROM programmers.

DISTINCTIVE CHARACTERISTICS

■ Single power supply operation

— Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications

— Regulated voltage range: 3.0 to 3.6 volt read and write operations and for compatibility

with high performance 3.3 volt microprocessors

■ Manufactured on 0.23 μm process technology

— Fully compatible with 0.32 μm Am29LV160B device

■ High performance

— Access times as fast as 70 ns

■ Ultra low power consumption (typical values at 5 MHz)

— 200 nA Automatic Sleep mode current

— 200 nA standby mode current

— 9 mA read current

— 20 mA program/erase current

■ Flexible sector architecture

— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and thirty-one 64 Kbyte sectors (byte mode)

— One 8 Kword, two 4 Kword, one 16 Kword, and thirty-one 32 Kword sectors (word mode)

— Supports full chip erase

— Sector Protection features:

— A hardware method of locking a sector to prevent any program or erase operations within that sector

— Sectors can be locked in-system or via programming equipment Temporary Sector Unprotect feature allows code changes in previously locked sectors

■ Unlock Bypass Program Command

— Reduces overall programming time when issuing multiple program command sequences

■ Top or bottom boot block configurations available

■ Embedded Algorithms

— Embedded Erase algorithm automatically preprograms and erases the entire chip or any combination of designated sectors

— Embedded Program algorithm automatically writes and verifies data at specified addresses

■ Minimum 1,000,000 write cycle guarantee per sector

■ 20-year data retention at 125°C

— Reliable operation for the life of the system

■ Package option

— 48-ball FBGA

— 48-pin TSOP

— 44-pin SO

■ CFI (Common Flash Interface) compliant

— Provides device-specific information to the system, allowing host software to easily reconfigure for different Flash devices

■ Compatibility with JEDEC standards

— Pinout and software compatible with single power supply Flash

— Superior inadvertent write protection

■ Data# Polling and toggle bits

— Provides a software method of detecting program or erase operation completion

■ Ready/Busy# pin (RY/BY#)

— Provides a hardware method of detecting program or erase cycle completion (not available on 44-pin SO)

■ Erase Suspend/Erase Resume

— Suspends an erase operation to read data from, or program data to, a sector that is not being erased, then resumes the erase operation

■ Hardware reset pin (RESET#)

— Hardware method to reset the device to reading array data

產(chǎn)品屬性

  • 型號(hào):

    L160DT90VF

  • 制造商:

    AMD

  • 制造商全稱:

    Advanced Micro Devices

  • 功能描述:

    16 Megabit(2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫(kù)存 備注 價(jià)格
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