首頁 >KTK5164S-RTK/P>規(guī)格書列表
| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
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NCHANNELMOSFIELDEFFECTTRANSISTOR ULTRA-HIGHSPEEDSWITCHINGAPPLICATIONS ANALOGSWITCHAPPLICATIONS FEATURES ?2.5GateDrive. ?LowThresholdVoltage:Vth=0.5～1.5V. ?HighSpeed. ?SmallPackage. ?Enhancement-Mode. | KECKEC CORPORATION KEC株式會(huì)社 | KEC | ||
CMOS64K(8Kx8)StaticRAM DESCRIPTION TheLH5164A/AHarestaticRAMsorganizedas8,192×8bits.Itisfabricatedusingsilicon-gateCMOSprocesstechnology. TheLH5164AHisdesignedforwidetemperaturerangefrom-40to+85°C. FEATURES ?8,192×8bitorganization ?Accesstimes:80/100ns(MAX.) ?Low-powerconsu | SHARPSharp Microelectronics of the Americas (SMA) 夏普微美國夏普微電子公司（SMA） | SHARP | ||
CMOS64K(8Kx8)StaticRAM | SHARPSharp Microelectronics of the Americas (SMA) 夏普微美國夏普微電子公司（SMA） | SHARP | ||
CMOS64K(8Kx8)StaticRAM | SHARPSharp Microelectronics of the Americas (SMA) 夏普微美國夏普微電子公司（SMA） | SHARP | ||
CMOS64K(8Kx8)StaticRAM DESCRIPTION TheLH5164A/AHarestaticRAMsorganizedas8,192×8bits.Itisfabricatedusingsilicon-gateCMOSprocesstechnology. TheLH5164AHisdesignedforwidetemperaturerangefrom-40to+85°C. FEATURES ?8,192×8bitorganization ?Accesstimes:80/100ns(MAX.) ?Low-powerconsu | SHARPSharp Microelectronics of the Americas (SMA) 夏普微美國夏普微電子公司（SMA） | SHARP | ||
CMOS64K(8Kx8)StaticRAM DESCRIPTION TheLH5164ASHisastaticRAMorganizedas8,192×8bits.Itisfabricatedusingsilicon-gateCMOSprocesstechnology. Itisdesignedfor2.5to5.5Vlowvoltageoperationandwidetemperaturerangefrom-40to+85°C. FEATURES ?8,192×8bitorganization ?Accesstime:500ns( | SHARPSharp Microelectronics of the Americas (SMA) 夏普微美國夏普微電子公司（SMA） | SHARP | ||
CMOS64K(8Kx8)StaticRAM DESCRIPTION TheLH5164AVisastaticRAMorganizedas8,192×8bits.Itisfabricatedusingsilicon-gateCMOSprocesstechnology. FEATURES ?8,192×8bitorganization ?Accesstime:200ns(MAX.) ?Supplycurrent(MAX.): Operating:248mW 55mW(tRC,tWC=1μs) Standby:5.5 | SHARPSharp Microelectronics of the Americas (SMA) 夏普微美國夏普微電子公司（SMA） | SHARP | ||
CMOS64K(8Kx8)StaticRAM DESCRIPTION TheLH5164AVHisastaticRAMorganizedas8,192×8bits.Itisfabricatedusingsilicon-gateCMOSprocesstechnology. FEATURES ?8,192×8bitorganization ?Accesstime:200ns(MAX.) ?Supplycurrent(MAX.): Operating:90mW 29mW(tRC,tWC=1μs) Standby:3. | SHARPSharp Microelectronics of the Americas (SMA) 夏普微美國夏普微電子公司（SMA） | SHARP | ||
100-VInput,1-ASynchronousBuckDC/DCConverterWithUltra-LowIQ | TI1Texas Instruments 德州儀器美國德州儀器公司 | TI1 | ||
100-VInput,1-ASynchronousBuckDC/DCConverterWithUltra-LowIQ | TI1Texas Instruments 德州儀器美國德州儀器公司 | TI1 |
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