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PHX1N60E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=1.3A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=6.0Ω(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

PJN1N60D

600VN-ChannelEnhancementModeMOSFET

PANJITPan Jit International Inc.

強(qiáng)茂強(qiáng)茂股份有限公司

PJU1N60

600VN-ChannelEnhancementModeMOSFET

PANJITPan Jit International Inc.

強(qiáng)茂強(qiáng)茂股份有限公司

SIHFR1N60A

PowerMOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ?Materialcategorization:Fordefinitionsofcompliancepleaseseewww.vishay.com/doc?99912 APPLICATIO

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHFR1N60A

PowerMOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ?Lead(Pb)-freeAvailable APPLICATIONS ?SwitchModePowerSupply(SMPS) ?UninterruptiblePowerSup

KERSEMI

Kersemi Electronic Co., Ltd.

SIHFR1N60A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

SiHFR1N60A

PowerMOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ?Lead(Pb)-freeAvailable APPLICATIONS ?SwitchModePowerSupply(SMPS) ?UninterruptiblePowerSup

LUCKY-LIGHT

Lucky Light Electronic

SIHFR1N60A

PowerMOSFET

FEATURES ?LowgatechargeQgresultsinsimpledrive requirement ?Improvedgate,avalancheanddynamicdV/dt ruggedness ?Fullycharacterizedcapacitanceand avalanchevoltageandcurrent ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPL

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHFR1N60A

N-Channel650V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

SIHFR1N60AT

PowerMOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ?Materialcategorization:Fordefinitionsofcompliancepleaseseewww.vishay.com/doc?99912 APPLICATIO

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細(xì)參數(shù)

  • 型號(hào)：

    KF1N60L

  • 制造商：

    KEC

  • 制造商全稱：

    KEC(Korea Electronics)

  • 功能描述：

    This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
KEC
TO-92
30216
提供BOM表配單TEL:0755-83759919QQ:2355705587杜S
 詢價(jià)
KEC
22+
TO-92
100000
代理渠道/只做原裝/可含稅
 詢價(jià)
KEC
23+
TO-92
89630
當(dāng)天發(fā)貨全新原裝現(xiàn)貨
 詢價(jià)
KEC
23+
TO-92L
13000
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
 詢價(jià)
LTL
24+
104
詢價(jià)
KF
SOT23-3
43000
一級(jí)代理 原裝正品假一罰十價(jià)格優(yōu)勢(shì)長(zhǎng)期供貨
 詢價(jià)
KF
22+
SOT23-3
25000
只有原裝原裝,支持BOM配單
 詢價(jià)
KFX
36118
SOT23-3
2015
專業(yè)代理電壓檢測(cè)IC,型號(hào)齊全,優(yōu)勢(shì)產(chǎn)品.
 詢價(jià)
KFX
24+
SOT23-3
333652
電壓檢測(cè)IC原裝現(xiàn)貨有優(yōu)勢(shì)
 詢價(jià)
ROHM
6000
面議
19
DIP/SMD
 詢價(jià)
更多KF1N60L供應(yīng)商 更新時(shí)間2025-7-23 9:11:00

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