首頁(yè) >KB520S-30B>規(guī)格書(shū)列表
| 零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
Schottkybarrierdiode | ROHMRohm 羅姆羅姆半導(dǎo)體集團(tuán) | ROHM | ||
SMDSchottkyBarrierDiode Io=200mA VR=30Volts RoHSDevice Features -Lowreversecurrent. -Designedformountingonsmallsurface. -Extremelythinpackage. -Majoritycarrierconduction. Mechanicaldata -Case:SOD-523standardpackage,moldedplastic. -Terminals:SolderableperMIL-STD-750,method2026. | COMCHIPComchip Technology 典琦典琦科技股份有限公司 | COMCHIP | ||
Schottkybarrierdiode Features ●UltraSmallmoldtype.(EMD2) ●LowIR. ●Highreliability. | KEXINGuangdong Kexin Industrial Co.,Ltd 科信電子廣東科信實(shí)業(yè)有限公司 | KEXIN | ||
200mW,LowVFSMDSchottkyBarrierDiode Features ◇Lowpowerloss,highcurrentcapability,lowVF ◇Surfacedevicetypemounting ◇Moisturesensitivitylevel1 ◇MatteTin(Sn)leadfinishwithNickel(Ni)underplate ◇PbfreeversionandRoHScompliant ◇Greencompound(Halogenfree)withsuffixGon packingcodeandprefixG | TSCTaiwan Semiconductor Company, Ltd 臺(tái)灣半導(dǎo)體臺(tái)灣半導(dǎo)體股份有限公司 | TSC | ||
SchottkybarrierDiodes FEATURES ●Smallsurfacemountingtype ●Lowreversecurrentandlowforwardvoltage ●Highreliability | TELTokyo Electron Ltd. 東電電子東京電子有限公司 | TEL | ||
200mASchottkyBarrierDiode30Volts Features ?EpoxymeetsUL94V-0flammabilityrating ?MoistureSensitivityLevel1 ?HighReliability ?LowReverseCurrentandLowForwardVoltage. ?SmallSurfaceMountType ?Marking:B ?LeadFreeFinish/RoHSCompliant(PSuffix designatesRoHSCompliant.Seeorderinginformation) | MCCMicro Commercial Components 美微科美微科半導(dǎo)體股份有限公司 | MCC | ||
SCHOTTKYBARRIERDIODES PRODUCTSUMMARY SOD-523Plastic-EncapsulateDiodes FEATURES Smallsurfacemountingtype LowIR.(IR=0.1uA) Highreliability | SSC Silicon Standard Corp. | SSC | ||
SILICONEPITAXIALPLANARSCHOTTKYBARRIERDIODE SILICONEPITAXIALPLANARSCHOTTKYBARRIERDIODE forlowcurrentrectificationandhighspeed switchingapplications Features ?Extremelysmallsurfacemountingtype ?Highreliability | SEMTECH_ELECSEMTECH ELECTRONICS LTD. 先之科半導(dǎo)體先之科半導(dǎo)體科技（東莞）有限公司 | SEMTECH_ELEC | ||
SchottkyBarrierDiode FEATURES ●LowIR=0.1μA. ●Highreliability. ●Smallsurfacemounting. APPLICATIONS ●Lowcurrentrectification. | BILINGalaxy Semi-Conductor Holdings Limited 銀河微電常州銀河世紀(jì)微電子股份有限公司 | BILIN | ||
Schottkybarrierdiode Features 1)UltraSmallmoldtype.(EMD2) 2)LowIR. 3)Highreliability. Applications Lowcurrentrectification Construction Siliconepitaxialplanar | ROHMRohm 羅姆羅姆半導(dǎo)體集團(tuán) | ROHM |
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