首頁>K4X56163P-L>規(guī)格書詳情
K4X56163P-L中文資料三星數(shù)據(jù)手冊PDF規(guī)格書
K4X56163P-L規(guī)格書詳情
FEATURES
? VDD/VDDQ = 1.8V/1.8V
? Double-data-rate architecture; two data transfers per clock cycle
? Bidirectional data strobe(DQS)
? Four banks operation
? Differential clock inputs(CK and CK)
? MRS cycle with address key programs
- CAS Latency ( 2, 3 )
- Burst Length ( 2, 4, 8, 16 )
- Burst Type (Sequential & Interleave)
? EMRS cycle with address key programs
- Partial Array Self Refresh ( Full, 1/2, 1/4 Array )
- Output Driver Strength Control ( Full, 1/2, 1/4, 1/8 )
? Internal Temperature Compensated Self Refresh
? All inputs except data & DM are sampled at the positive going edge of the system clock(CK).
? Data I/O transactions on both edges of data strobe, DM for masking.
? Edge aligned data output, center aligned data input.
? No DLL; CK to DQS is not synchronized.
? DM0 - DM3 for write masking only.
? Auto refresh duty cycle
- 7.8us for -25 to 85 °C
產品屬性
- 型號：
K4X56163P-L
- 制造商：
SAMSUNG
- 制造商全稱：
Samsung semiconductor
- 功能描述：
16Mx16 Mobile DDR SDRAM
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
SAMSUNG/三星 |
20+ |
BGA |
19570 |
原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價 | ||
SAMSUNG/三星 |
24+ |
NA/ |
1319 |
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價 | ||
SEC |
2016+ |
FBGA |
9000 |
只做原裝,假一罰十,公司可開17%增值稅發(fā)票! |
詢價 | ||
SEC |
24+ |
FBGA |
80000 |
只做自己庫存 全新原裝進口正品假一賠百 可開13%增 |
詢價 | ||
SAMSUNG/三星 |
1948+ |
BGA |
6852 |
只做原裝正品現(xiàn)貨!或訂貨假一賠十! |
詢價 | ||
SAMSUN |
1046+ |
(BGA) |
222 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
SAMSUNG |
2022+ |
BGA |
20000 |
只做原裝進口現(xiàn)貨.假一罰十 |
詢價 | ||
SAMSUNG/三星 |
24+ |
BGA |
30000 |
房間原裝現(xiàn)貨特價熱賣,有單詳談 |
詢價 | ||
SAMSUNG/三星 |
23+ |
BGA |
25000 |
代理原裝現(xiàn)貨,假一賠十 |
詢價 | ||
SAMSUNG/三星 |
25+ |
BGA |
880000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 |
