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K4X51163PC

32M x16 Mobile-DDR SDRAM

FEATURES ?1.8Vpowersupply,1.8VI/Opower ?Double-data-ratearchitecture;twodatatransfersperclockcycle ?Bidirectionaldatastrobe(DQS) ?Fourbanksoperation ?1/CS ?1CKE ?Differentialclockinputs(CKandCK) ?MRScyclewithaddresskeyprograms -CASLatency(2,3)

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4X51163PC-FEC3

32M x16 Mobile-DDR SDRAM

FEATURES ?1.8Vpowersupply,1.8VI/Opower ?Double-data-ratearchitecture;twodatatransfersperclockcycle ?Bidirectionaldatastrobe(DQS) ?Fourbanksoperation ?1/CS ?1CKE ?Differentialclockinputs(CKandCK) ?MRScyclewithaddresskeyprograms -CASLatency(2,3)

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4X51163PC-FECA

32M x16 Mobile-DDR SDRAM

FEATURES ?1.8Vpowersupply,1.8VI/Opower ?Double-data-ratearchitecture;twodatatransfersperclockcycle ?Bidirectionaldatastrobe(DQS) ?Fourbanksoperation ?1/CS ?1CKE ?Differentialclockinputs(CKandCK) ?MRScyclewithaddresskeyprograms -CASLatency(2,3)

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4X51163PC-FGC3

32M x16 Mobile-DDR SDRAM

FEATURES ?1.8Vpowersupply,1.8VI/Opower ?Double-data-ratearchitecture;twodatatransfersperclockcycle ?Bidirectionaldatastrobe(DQS) ?Fourbanksoperation ?1/CS ?1CKE ?Differentialclockinputs(CKandCK) ?MRScyclewithaddresskeyprograms -CASLatency(2,3)

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4X51163PC-FGCA

32M x16 Mobile-DDR SDRAM

FEATURES ?1.8Vpowersupply,1.8VI/Opower ?Double-data-ratearchitecture;twodatatransfersperclockcycle ?Bidirectionaldatastrobe(DQS) ?Fourbanksoperation ?1/CS ?1CKE ?Differentialclockinputs(CKandCK) ?MRScyclewithaddresskeyprograms -CASLatency(2,3)

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4X51163PC-LEC3

32M x16 Mobile-DDR SDRAM

FEATURES ?1.8Vpowersupply,1.8VI/Opower ?Double-data-ratearchitecture;twodatatransfersperclockcycle ?Bidirectionaldatastrobe(DQS) ?Fourbanksoperation ?1/CS ?1CKE ?Differentialclockinputs(CKandCK) ?MRScyclewithaddresskeyprograms -CASLatency(2,3)

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4X51163PC-LECA

32M x16 Mobile-DDR SDRAM

FEATURES ?1.8Vpowersupply,1.8VI/Opower ?Double-data-ratearchitecture;twodatatransfersperclockcycle ?Bidirectionaldatastrobe(DQS) ?Fourbanksoperation ?1/CS ?1CKE ?Differentialclockinputs(CKandCK) ?MRScyclewithaddresskeyprograms -CASLatency(2,3)

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4X51163PC-LGC3

32M x16 Mobile-DDR SDRAM

FEATURES ?1.8Vpowersupply,1.8VI/Opower ?Double-data-ratearchitecture;twodatatransfersperclockcycle ?Bidirectionaldatastrobe(DQS) ?Fourbanksoperation ?1/CS ?1CKE ?Differentialclockinputs(CKandCK) ?MRScyclewithaddresskeyprograms -CASLatency(2,3)

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4X51163PC-LGCA

32M x16 Mobile-DDR SDRAM

FEATURES ?1.8Vpowersupply,1.8VI/Opower ?Double-data-ratearchitecture;twodatatransfersperclockcycle ?Bidirectionaldatastrobe(DQS) ?Fourbanksoperation ?1/CS ?1CKE ?Differentialclockinputs(CKandCK) ?MRScyclewithaddresskeyprograms -CASLatency(2,3)

SamsungSamsung semiconductor

三星三星半導(dǎo)體

詳細(xì)參數(shù)

  • 型號：

    K4X51163PC

  • 制造商：

    SAMSUNG

  • 制造商全稱：

    Samsung semiconductor

  • 功能描述：

    32M x16 Mobile-DDR SDRAM

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
BGA
22
詢價(jià)
SAMSUNG/三星
23+
BGA
13000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價(jià)格優(yōu)勢、品種
 詢價(jià)
SAMSUNG
23+
BGA
8000
只做原裝現(xiàn)貨
 詢價(jià)
SEC
BGA
177
全新原裝進(jìn)口自己庫存優(yōu)勢
 詢價(jià)
SAMSUNG
07+
BGA
1
詢價(jià)
SAM
24+
FBGA60
6980
原裝現(xiàn)貨,可開13%稅票
 詢價(jià)
SAMSUNG
23+
FBGA60
5000
原裝正品,假一罰十
 詢價(jià)
SAMSUNG
24+
BGA
25
詢價(jià)
SEC
24+
BGA
5000
全現(xiàn)原裝公司現(xiàn)貨
 詢價(jià)
SEC
17+
BGA
9988
只做原裝進(jìn)口,自己庫存
 詢價(jià)
更多K4X51163PC供應(yīng)商 更新時(shí)間2025-7-23 8:01:00

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