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K4H511638D-UC/LCC

512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)

KeyFeatures ?VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 ?VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 ?Double-data-ratearchitecture;twodatatransfersperclockcycle ?Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) ?Fourbanksoperation ?Dif

SamsungSamsung semiconductor

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K4H511638D-UC0

512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)

KeyFeatures ?VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 ?VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 ?Double-data-ratearchitecture;twodatatransfersperclockcycle ?Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) ?Fourbanksoperation ?Dif

SamsungSamsung semiconductor

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K4H511638D-UC2

512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)

KeyFeatures ?VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 ?VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 ?Double-data-ratearchitecture;twodatatransfersperclockcycle ?Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) ?Fourbanksoperation ?Dif

SamsungSamsung semiconductor

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K4H511638D-UC3

512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)

KeyFeatures ?VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 ?VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 ?Double-data-ratearchitecture;twodatatransfersperclockcycle ?Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) ?Fourbanksoperation ?Dif

SamsungSamsung semiconductor

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K4H511638D-UCC

512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)

KeyFeatures ?VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 ?VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 ?Double-data-ratearchitecture;twodatatransfersperclockcycle ?Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) ?Fourbanksoperation ?Dif

SamsungSamsung semiconductor

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K4H511638D-UCSLASHLA2

512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)

KeyFeatures ?VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 ?VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 ?Double-data-ratearchitecture;twodatatransfersperclockcycle ?Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) ?Fourbanksoperation ?Dif

SamsungSamsung semiconductor

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K4H511638D-UCSLASHLA2

512Mb D-die DDR SDRAM Specification

KeyFeatures ?VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 ?VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 ?Double-data-ratearchitecture;twodatatransfersperclockcycle ?Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) ?Fourbanksoperation ?Dif

SamsungSamsung semiconductor

三星三星半導體

K4H511638D-UCSLASHLB0

512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)

KeyFeatures ?VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 ?VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 ?Double-data-ratearchitecture;twodatatransfersperclockcycle ?Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) ?Fourbanksoperation ?Dif

SamsungSamsung semiconductor

三星三星半導體

K4H511638D-UCSLASHLB0

512Mb D-die DDR SDRAM Specification

KeyFeatures ?VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 ?VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 ?Double-data-ratearchitecture;twodatatransfersperclockcycle ?Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) ?Fourbanksoperation ?Dif

SamsungSamsung semiconductor

三星三星半導體

K4H511638D-UCSLASHLB3

512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)

KeyFeatures ?VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 ?VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 ?Double-data-ratearchitecture;twodatatransfersperclockcycle ?Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) ?Fourbanksoperation ?Dif

SamsungSamsung semiconductor

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詳細參數(shù)

  • 型號：

    K4H511638D

  • 制造商：

    SAMSUNG

  • 制造商全稱：

    Samsung semiconductor

  • 功能描述：

    DDR SDRAM Product Guide

供應商型號品牌批號封裝庫存備注價格
SAMSUNG
TSOP
140
正品原裝--自家現(xiàn)貨-實單可談
 詢價
SAMSUNG
23+
TSOP
18689
詢價
SAMSUNG
08PB
BGA
3600
全新原裝進口自己庫存優(yōu)勢
 詢價
SAMSUNG
2020+
TSSOP
508
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價
SAMSUNG
17+
TSOP
6200
100%原裝正品現(xiàn)貨
 詢價
SAMSUNG
24+
TSOP
4650
詢價
SAMSUNG
24+
TSOP
162
詢價
SAMSUNG
24+
TSOP
200
原裝現(xiàn)貨假一罰十
 詢價
SAMSUSNG
23+
TSOP
5000
原裝正品,假一罰十
 詢價
SANSUNG
16+
TSOP
159
全新原裝現(xiàn)貨
 詢價
更多K4H511638D供應商 更新時間2025-7-28 16:20:00

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