GENERAL DESCRIPTION

FOR 1M x 32Bit x 4 Bank DDR SDRAM

The K4D263238E is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x1,048,576 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous features with Data Strobe allow extremely high performance up to 3.2GB/s/chip. I/O transactions are possible on both edges of the clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the device to be useful for a variety of high performance memory system applications.

FEATURES

? VDD/VDDQ = 2.8V ± 5 for -GC25

? VDD/VDDQ = 2.5V ± 5 for -GC2A/33/36/40/45

? SSTL_2 compatible inputs/outputs

? 4 banks operation

? MRS cycle with address key programs

-. Read latency 3, 4, 5 (clock)

-. Burst length (2, 4, 8 and Full page)

-. Burst type (sequential & interleave)

? Full page burst length for sequential burst type only

? Start address of the full page burst should be even

? All inputs except data & DM are sampled at the positive

going edge of the system clock

? Differential clock input

? No Wrtie-Interrupted by Read Function

? 4 DQS’s ( 1DQS / Byte )

? Data I/O transactions on both edges of Data strobe

? DLL aligns DQ and DQS transitions with Clock transition

? Edge aligned data & data strobe output

? Center aligned data & data strobe input

? DM for write masking only

? Auto & Self refresh

? 32ms refresh period (4K cycle)

? 144-Ball FBGA

? Maximum clock frequency up to 400MHz

? Maximum data rate up to 800Mbps/pin