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DS320W

Marking：K320；Package：SOD-123FL；Surface Mount Schottky Barrier Rectifier

Features Metalsiliconjunction,majoritycarrierconduction Forsurfacemountedapplications Lowpowerloss,highefficiency Highforwardsurgecurrentcapability Foruseinlowvoltage,highfrequencyinverters, freewheeling,andpolarityprotectionapplications

DS32W

Marking：K32；Package：SOD-123FL；Surface Mount Schottky Barrier Rectifier

Features Metalsiliconjunction,majoritycarrierconduction Forsurfacemountedapplications Lowpowerloss,highefficiency Highforwardsurgecurrentcapability Foruseinlowvoltage,highfrequencyinverters, freewheeling,andpolarityprotectionapplications

DS34W

Marking：K34；Package：SOD-123FL；Surface Mount Schottky Barrier Rectifier

Features Metalsiliconjunction,majoritycarrierconduction Forsurfacemountedapplications Lowpowerloss,highefficiency Highforwardsurgecurrentcapability Foruseinlowvoltage,highfrequencyinverters, freewheeling,andpolarityprotectionapplications

DS36W

Marking：K36；Package：SOD-123FL；Surface Mount Schottky Barrier Rectifier

Features Metalsiliconjunction,majoritycarrierconduction Forsurfacemountedapplications Lowpowerloss,highefficiency Highforwardsurgecurrentcapability Foruseinlowvoltage,highfrequencyinverters, freewheeling,andpolarityprotectionapplications

DS38W

Marking：K38；Package：SOD-123FL；Surface Mount Schottky Barrier Rectifier

Features Metalsiliconjunction,majoritycarrierconduction Forsurfacemountedapplications Lowpowerloss,highefficiency Highforwardsurgecurrentcapability Foruseinlowvoltage,highfrequencyinverters, freewheeling,andpolarityprotectionapplications

DTAD3R

Marking：K3B；DIGITAL TRANSISTOR

Features 1)Built-InBiasingResistors,R1=R2=10kΩ 2)Built-inbiasresistorsenabletheconfigurationof aninvertercircuitwithoutconnectingexternal inputresistors(seeinnercircuit). 3)Onlytheon/offconditionsneedtobeset foroperation,makingthecircuitdesigne

EM2376K

Marking：K36；Package：DFN-2514；Transient Voltage Suppressors for ESD Protection

Features TVSworkingvoltage:5V Resistor:100Ω+/?20 TypicalCapacitance:20pF(VR=0V) Protectionandfilteringforfourlines Solid-statetechnology RoHSCompliant BidirectionalEMI/RFIfilterwithintegratedTVSforESDprotection Filterperformance:30dBminimumattenuation1.8GHzt

EM2378K

Marking：K38；Package：DFN-3314；Transient Voltage Suppressors for ESD Protection

Features TVSworkingvoltage:5V Resistor:100Ω+/?20 TypicalCapacitance:20pF(VR=0V) Protectionandfilteringforfourlines Solid-statetechnology RoHSCompliant BidirectionalEMI/RFIfilterwithintegratedTVSforESDprotection Filterperformance:30dBminimumattenuation1.8GHzt

IKN03N60RC2

Marking：K3DRC2；Package：PG-SOT223-3；600 V Reverse Conducting Drive 2 offering cost effective IGBT with monolithically integrated diode

Features ?VCE=600V ?IC=3A ?Verytightparameterdistribution ?Operatingrangeof1to20kHz ?Maximumjunctiontemperature150°C ?Shortcircuitcapabilityof3μs ?Humidityrobustdesign ?Pb-freeleadplating;RoHScompliant ?CompleteproductspectrumandPSpiceModels:htt

KDV804S

Marking：K3A；Package：SOT-23；VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(TUNING OF SEPERATE RESONANT CIRCUIT)

TUNINGOFSEPERATERESONANTCIRCUIT,PUSH-PULL CIRCUITINFMRANGE,ESPECIALLYFORCARAUDIO. FEATURES ?LowSeriesResistance:rs=0.3(TYP.). ?SmallPackage:SOT-23.