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K19
DTA115G

DIGITAL TRANSISTOR

Features 1)Built-InBiasingResistors,R1=R2=10kΩ 2)Built-inbiasresistorsenabletheconfigurationof aninvertercircuitwithoutconnectingexternal inputresistors(seeinnercircuit). 3)Onlytheon/offconditionsneedtobeset foroperation,makingthecircuitdesigne

K19
DTA115GKA

Package：SOT-346；Digital transistors (built-in resistor)

Features 1)Thebuilt-inbiasresistorsconsistofthin-filmresistors withcompleteisolationtoallowpositivebiasingofthe input,andparasiticeffectsarealmostcompletely eliminated. 2)Onlytheon/offconditionsneedtobeset foroperation,makingdevicedesigneasy.

K19
DTA115GUA

Package：SOT-323；Digital transistors (built-in resistor)

Features 1)Thebuilt-inbiasresistorsconsistofthin-filmresistors withcompleteisolationtoallowpositivebiasingofthe input,andparasiticeffectsarealmostcompletely eliminated. 2)Onlytheon/offconditionsneedtobeset foroperation,makingdevicedesigneasy.

K19
MBRS190

Package：SOD-123FL；SCHOTTK Y BARRIER DIODE

Features TheplasticpackagecarriesUnderwritersLaboratory FlammabilityClassification94V-0 Metalsiliconjunction,majoritycarrierconduction Lowpowerloss,highefficiency Highforwardsurgecurrentcapability Hightemperaturesolderingguaranteed: 250C/10seconds,0.375”(9.5mm)leadl

K19
SS1090FL

Package：SOD-123FL；SCHOTTK Y BARRIER DIODE

Features TheplasticpackagecarriesUnderwritersLaboratory FlammabilityClassification94V-0 Metalsiliconjunction,majoritycarrierconduction Lowpowerloss,highefficiency Highforwardsurgecurrentcapability Hightemperaturesolderingguaranteed: 250C/10seconds,0.375”(9.5mm)leadl

K19
DTA115GUA

Package：SOT-323；PNP -100mA -50V Digital Transistor

K190A65Z
TK190A65Z

Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications ?SwitchingPowerSupplies Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.158Ω(typ.) (2)High-speedswitchingpropertieswiththelowercapacitance. (3)Enhancementmode:Vth=3to4V(VDS=10V,ID=0.61mA)

K190E65Z
TK190E65Z

Package：TO-220；MOSFETs Silicon N-Channel MOS

Applications ?SwitchingPowerSupplies Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.158Ω(typ.) (2)High-speedswitchingpropertieswithlowercapacitance. (3)Enhancementmode:Vth=3to4V(VDS=10V,ID=0.61mA)

K190U65Z
TK190U65Z

Package：TOLL；MOSFETs Silicon N-Channel MOS

Applications ?SwitchingPowerSupplies Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.149Ω(typ.) (2)High-speedswitchingpropertieswiththelowercapacitance. (3)Enhancementmode:Vth=3to4V(VDS=10V,ID=0.61mA)

K19A50W
TK19A50W

Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications ?SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.16Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (2)EasytocontrolGateswitching (3)Enhancementmode:Vth=2.7to3.7V(VDS=10V,ID=0.79mA)