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K11A65D

型號(hào):TK11A65D;Package:TO-220SIS;MOSFETs Silicon N-Channel MOS

Applications ?SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.54Ω(typ.) (2)Highforwardtransferadmittance:|Yfs|=7.5S(typ.) (3)Lowleakagecurrent:IDSS=10μA(max)(VDS=650V) (4)Enhancementmode:Vth=2.0to4.0V(VDS=10V,ID=1

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

K11A65W

型號(hào):TK11A65W;Package:TO-220SIS;MOSFETs Silicon N-Channel MOS

Applications ?SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.33Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (2)EasytocontrolGateswitching (3)Enhancementmode:Vth=2.5to3.5V(VDS=10V,ID=0.45mA)

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

K125A60Z1

型號(hào):TK125A60Z1;Package:TO-220SIS;MOSFETs Silicon N-Channel MOS

Applications ?SwitchingPowerSupplies Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.105Ω(typ.) (2)High-speedswitchingpropertieswiththelowercapacitance. (3)Enhancementmode:Vth=3to4V(VDS=10V,ID=0.73mA)

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

K125E60Z1

型號(hào):TK125E60Z1;Package:TO-220;MOSFETs Silicon N-Channel MOS

Applications ?SwitchingPowerSupplies Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.105Ω(typ.) (2)High-speedswitchingpropertieswithlowercapacitance. (3)Enhancementmode:Vth=3to4V(VDS=10V,ID=0.73mA)

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

K125N60Z1

型號(hào):TK125N60Z1;Package:TO-247;MOSFETs Silicon N-Channel MOS

Applications ?SwitchingPowerSupplies Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.105Ω(typ.) (2)High-speedswitchingpropertieswithlowercapacitance. (3)Enhancementmode:Vth=3to4V(VDS=10V,ID=0.73mA)

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

K125U60Z1

型號(hào):TK125U60Z1;Package:TOLL;MOSFETs Silicon N-Channel MOS

Applications ?SwitchingPowerSupplies Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.105Ω(typ.) (2)High-speedswitchingpropertieswiththelowercapacitance. (3)Enhancementmode:Vth=3to4V(VDS=10V,ID=0.73mA)

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

K125Z60Z1

型號(hào):TK125Z60Z1;Package:TO-247-4L;MOSFETs Silicon N-Channel MOS

Applications ?SwitchingPowerSupplies Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.105Ω(typ.) (2)High-speedswitchingpropertieswiththelowercapacitance. (3)Enhancementmode:Vth=3to4V(VDS=10V,ID=0.73mA)

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

K12A50W

型號(hào):TK12A50W;Package:TO-220SIS;MOSFETs Silicon N-Channel MOS

Applications ?SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.265Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (2)EasytocontrolGateswitching (3)Enhancementmode:Vth=2.7to3.7V(VDS=10V,ID=0.6mA)

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

K12A60D

型號(hào):TK12A60D;Package:SC-67;Switching Regulator Applications

SwitchingRegulatorApplications ?Lowdrain-sourceONresistance:RDS(ON)=0.45?(typ.) ?Highforwardtransferadmittance:?Yfs?=7.5S(typ.) ?Lowleakagecurrent:IDSS=10μA(max)(VDS=600V) ?Enhancement-mode:Vth=2.0to4.0V(VDS=10V,ID=1mA)

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

K12A80W

型號(hào):TK12A80W;Package:TO-220SIS;MOSFETs Silicon N-Channel MOS

Applications ?SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.38Ω(typ.) byusingSuperJunctionStructure:DTMOS (2)EasytocontrolGateswitching (3)Enhancementmode:Vth=3.0to4.0V(VDS=10V,ID=0.57mA)

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

詳細(xì)參數(shù)

  • 型號(hào):

    K1

  • 功能描述:

    二極管 - 通用,功率,開關(guān) 1500W 20V 5% UNI TRANSZORB-TVS

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 產(chǎn)品:

    Switching Diodes

  • 峰值反向電壓:

    600 V

  • 正向連續(xù)電流:

    200 A

  • 最大浪涌電流:

    800 A

  • 恢復(fù)時(shí)間:

    2000 ns

  • 正向電壓下降:

    1.25 V

  • 最大反向漏泄電流:

    300 uA

  • 安裝風(fēng)格:

    SMD/SMT

  • 封裝/箱體:

    ISOTOP

  • 封裝:

    Tube

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一級(jí)代理/全新原裝現(xiàn)貨/長期供應(yīng)!
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原廠渠道 可含稅出貨
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21+20
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全新原裝公司現(xiàn)貨
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十年信譽(yù),只做原裝,有掛就有現(xiàn)貨!
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更多K1供應(yīng)商 更新時(shí)間2025-7-28 9:02:00