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IKD10N60RC2

Marking:K10DRC2;Package:PG-TO252-3;TRENCHSTOPTM RC-Series for hard switching applications Cost effective monolithically integrated IGBT with Diode

Features: TRENCHSTOPTMReverseConducting(RC)technologyfor600V applicationsoffering ?Verytightparameterdistribution ?Operatingrangeupto20kHz ?Maximumjunctiontemperature175°C ?Shortcircuitcapabilityof3μs ?Humidityrobustdesign ?Pb-freeleadplating;RoHScompliant

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IKN01N60RC2

Marking:K1DRC2;Package:PG-SOT223-3;600 V Reverse Conducting Drive 2 offering cost effective IGBT with monolithically integrated diode

Features ?VCE=600V ?IC=1A ?Verytightparameterdistribution ?Operatingrangeof1to20kHz ?Maximumjunctiontemperature150°C ?Shortcircuitcapabilityof3μs ?Humidityrobustdesign ?Pb-freeleadplating;RoHScompliant ?CompleteproductspectrumandPSpiceModels:htt

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IKQ100N120CH7

Marking:K100MCH7;Package:PG-TO247-3-PLUS-NN3.7;High speed 1200 V TRENCHSTOP? IGBT 7 Technology

Highspeed1200VTRENCHSTOP?IGBT7Technologyco-packedwithfullratedcurrent,soft-commutating,ultra-fastrecoveryandlowQrremittercontrolled7Rapiddiode Features ?VCE=1200V ?IC=100A ?MaximumjunctiontemperatureTvjmax=175°C ?Best-in-classhighspeedIGBTco-packed

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IKQ100N120CS7

Marking:K100MCS7;Package:PG-TO247-3;Short circuit rugged 1200 V TRENCHSTOP? IGBT 7 technology copacked with soft, fast recovery Emitter Controlled 7 diode

Features ?VCE=1200V ?IC=100A ?IGBTco-packedwithfullcurrent,softandlowQrrdiode ?LowsaturationvoltageVCEsat=2.0VatTvj=175°C ?Optimizedforhardswitchingtopologies(2-Linverter,3-LNPCT-type,...) ?Shortcircuitruggedness8μs ?Widerangeofdv/dtcontroll

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IKQ120N120CH7

Marking:K120MCH7;Package:PG-TO247-3-PLUS-NN3.7;High speed 1200 V TRENCHSTOP? IGBT 7 Technology co-packed with full rated current, soft-commutating, ultra-fast recovery and low Qrr emitter controlled 7 Rapid diode

Features ?VCE=1200V ?IC=120A ?MaximumjunctiontemperatureTvjmax=175°C ?Best-in-classhighspeedIGBTco-packedwithfullratedcurrent,lowQrrandsoft-commutating highspeeddiode ?LowsaturationvoltageVCEsat=1.7VatTvj=25°C ?Optimizedforhighefficiencyinhighs

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IKQ120N120CS7

Marking:K120MCS7;Package:PG-TO247-3-PLUS-NN3.7;Short circuit rugged 1200 V TRENCHSTOP? IGBT 7 technology copacked with soft, fast recovery Emitter Controlled 7 diode

Features ?VCE=1200V ?IC=120A ?IGBTco-packedwithfullcurrent,softandlowQrrdiode ?LowsaturationvoltageVCEsat=2.0VatTvj=175°C ?Optimizedforhardswitchingtopologies(2-Linverter,3-LNPCT-type,...) ?Shortcircuitruggedness8μs ?Widerangeofdv/dtcontroll

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IKQ120N65EH7

Marking:K120EEH7;Package:PG-TO247-3-PLUS-NN3.7;High speed and low saturation voltage 650 V TRENCHSTOP? IGBT7 technology copacked with soft, fast recovery Emitter Controlled 7 diode

Features ?VCE=650V ?IC=120A ?Lowswitchinglosses ?Verylowcollector-emittersaturationvoltageVCEsat ?Verysoft,fastrecoveryantiparalleldiode ?Smoothswitchingbehavior ?Humidityrobustness ?Optimizedforhardswitching,two-andthree-leveltopologies ?Completeprod

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IKQ150N65EH7

Marking:K150EEH7;Package:PG-TO247-3-PLUS-NN3.7;High speed and low saturation voltage 650 V TRENCHSTOP? IGBT7 technology copacked with soft, fast recovery Emitter Controlled 7 diode

Features ?VCE=650V ?IC=150A ?Lowswitchinglosses ?Verylowcollector-emittersaturationvoltageVCEsat ?Verysoft,fastrecoveryantiparalleldiode ?Smoothswitchingbehavior ?Humidityrobustness ?Optimizedforhardswitching,two-andthree-leveltopologies ?Completeprod

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IKQB120N75CP2

Marking:K120GCP2;Package:PG-TO247-3-PLUS-NN8.5;Short circuit rugged 750 V EDT2 IGBT in reflow-solderable package co-packed with soft and fast recovery diode

Features ?VCE=750V ?IC=120A ?LowsaturationvoltageVCEsat=1.4V ?Lowswitchinglosses ?Shortcircuitruggedness3μs ?IGBTco-packedwithfullcurrent,softandfastrecoverydiode ?Optimizedforhardswitchingtopologiesupto10KHz ?Packagebacksidesuitableforreflow

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IKQB160N75CP2

Marking:K160GCP2;Package:PG-TO247-3-PLUS-NN8.5;Short circuit rugged 750 V EDT2 IGBT in reflow-solderable package co-packed with soft and fast recovery diode

Features ?VCE=750V ?IC=160A ?LowsaturationvoltageVCEsat=1.4V ?Lowswitchinglosses ?Shortcircuitruggedness3μs ?IGBTco-packedwithfullcurrent,softandfastrecoverydiode ?Optimizedforhardswitchingtopologiesupto10KHz ?Packagebacksidesuitableforreflow

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

產(chǎn)品屬性

  • 產(chǎn)品編號(hào):

    K1

  • 制造商:

    Nidec Copal Electronics

  • 類別:

    開關(guān) > 配件

  • 包裝:

    散裝

  • 配件類型:

    旋鈕 - 黑色

  • 配套使用/相關(guān)產(chǎn)品:

    S-1000A,S-2000A,SS-10 系列,帶延長(zhǎng)軸

  • 描述:

    SWITCH KNOB BLACK

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
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TO-89
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TO-89
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PLINGSEMIC
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SOD-123FL
50000
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NA/
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PLINGSEMIC
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7000
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PLINGSEMIC
24+
SOD-123FL
60000
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更多K1供應(yīng)商 更新時(shí)間2025-7-26 16:36:00