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PST3160

CMOSSystemReset

Outline ThisICisasystemresetICdevelopedusingtheCMOSprocess.Superlowconsumptioncurrentof0.25μAtyp.hasbeenachievedthroughuseoftheCMOSprocess.Also,detectionvoltageishighprecisiondetectionof±2. Features 1.Superlowconsumptioncurrent0.25μAtyp.(whenVDD

MITSUMIMitsumi Electronics, Corp.

三美三美電機(jī)株式會社

PST3160

ICforCMOSSystemReset

Outline ThisICisasystemresetICdevelopedusingtheCMOSprocess.Superlowconsumptioncurrentof0.25μAtyp.hasbeenachievedthroughuseoftheCMOSprocess.Also,detectionvoltageishighprecisiondetectionof±2. Features 1.Superlowconsumptioncurrent0.25μAtyp.(whenVDD

MITSUMIMitsumi Electronics, Corp.

三美三美電機(jī)株式會社

QFA3160

Roomsensorsforrelativehumidity(highaccuracy)andtemperature

SIEMENSSiemens Semiconductor Group

西門子德國西門子股份公司

QFA3160D

Roomsensorsforrelativehumidity(highaccuracy)andtemperature

SIEMENSSiemens Semiconductor Group

西門子德國西門子股份公司

QFM3160

Ductsensorsforrelativehumidity(highaccuracy)andtemperature

?OperatingvoltageAC24V/DC13.5...35V ?SignaloutputDC0...5V/DC0...10V/4…20mAforrelativehumidityand temperature ?Veryhighmeasuringaccuracyacrosstheentiremeasuringrange ?Functiontest ?Capacitivehumiditymeasurement ?Rangeofuse?40…?70°C/0…100%r.

SIEMENSSiemens Semiconductor Group

西門子德國西門子股份公司

QFM3160D

Ductsensorsforrelativehumidity(highaccuracy)andtemperature

?OperatingvoltageAC24V/DC13.5...35V ?SignaloutputDC0...5V/DC0...10V/4…20mAforrelativehumidityand temperature ?Veryhighmeasuringaccuracyacrosstheentiremeasuringrange ?Functiontest ?Capacitivehumiditymeasurement ?Rangeofuse?40…?70°C/0…100%r.

SIEMENSSiemens Semiconductor Group

西門子德國西門子股份公司

RF3160

DUAL-BANDGSM/DCSPOWERAMPMODULE

ProductDescription TheRF3160isahigh-power,high-efficiencypoweramplifiermodule.Thedeviceisself-containedwith50?inputandoutputterminals.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)process,andhasbeendesignedforuseasth

RFMDRF Micro Devices

威訊聯(lián)合威訊聯(lián)合半導(dǎo)體(德州)有限公司

RF3160PCBA

DUAL-BANDGSM/DCSPOWERAMPMODULE

ProductDescription TheRF3160isahigh-power,high-efficiencypoweramplifiermodule.Thedeviceisself-containedwith50?inputandoutputterminals.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)process,andhasbeendesignedforuseasth

RFMDRF Micro Devices

威訊聯(lián)合威訊聯(lián)合半導(dǎo)體(德州)有限公司

SCT3160KL

N-channelSiCpowerMOSFET

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

SCT3160KLHR

AutomotiveGradeN-channelSiCpowerMOSFET

Features 5)Easytoparallel 6)Simpletodrive 7)Pb-freeleadplating;RoHScompliant 1)QualifiedtoAEC-Q101 2)Lowon-resistance 3)Fastswitchingspeed 4)Fastreverserecovery Application ?Automobile ?Switchmodepowersupplies

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

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65230
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Pulse Electronics Corporation
2010+
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2447
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100500
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20+
連接器
493
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