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JFE150

JFE150 Ultra-Low-Noise, Low-Gate-Current, Audio, N-Channel JFET

1Features ?Ultra-lownoise: –Voltagenoise: ?0.8nV/√Hzat1kHz,IDS=5mA ?0.9nV/√Hzat1kHz,IDS=2mA –Currentnoise:1.8fA/√Hzat1kHz ?Lowgatecurrent:10pA(max) ?Lowinputcapacitance:24pFatVDS=5V ?Highgate-to-drainandgate-to-sourcebreakdown voltage:–4

JFE150

超低噪聲、低柵極電流、音頻、N 溝道 JFET; ? Ultra-low noise: \n? Voltage noise: \n? 0.8 nV/√Hz at 1 kHz, IDS = 5 mA\n? 0.9 nV/√Hz at 1 kHz, IDS = 2 mA\n \n? Current noise: 1.8 fA/√Hz at 1 kHz\n \n? Low gate current: 10 pA (max)\n? Low input capacitance: 24 pF at VDS = 5 V \n? High gate-to-drain and gate-to-source breakdown voltage: –40 V \n? High transconductance: 68 mS \n? Packages: Small SC70 and SOT-23 (Preview);

The JFE150 is a Burr-Brown? discrete JFET built using Texas Instruments? modern, high-performance, analog bipolar process. The JFE150 features performance not previously available in older discrete JFET technologies. The JFE150 offers the maximum possible noise-to-power efficiency and flexibility, where the quiescent current can be set by the user and yields excellent noise performance for currents from 50 μA to 20 mA. When biased at 5 mA, the device yields 0.8 nV/√Hz of input-referred noise, giving ultra-low noise performance with extremely high input impedance (> 1 TΩ). The JFE150 also features integrated diodes connected to separate clamp nodes to provide protection without the addition of high leakage, nonlinear external diodes.\n\nThe JFE150 can withstand a high drain-to-source voltage of 40-V, as well as gate-to-source and gate-to-drain voltages down to –40 V. The temperature range is specified from –40°C to +125°C. The device is offered in 5-pin SOT-23 and SC-70 packages.

JFE150

JFE150 Ultra-Low Noise, Low Gate Current, Audio, N-Channel JFET

JFE150_V01

JFE150 Ultra-Low-Noise, Low-Gate-Current, Audio, N-Channel JFET

1Features ?Ultra-lownoise: –Voltagenoise: ?0.8nV/√Hzat1kHz,IDS=5mA ?0.9nV/√Hzat1kHz,IDS=2mA –Currentnoise:1.8fA/√Hzat1kHz ?Lowgatecurrent:10pA(max) ?Lowinputcapacitance:24pFatVDS=5V ?Highgate-to-drainandgate-to-sourcebreakdown voltage:–4

JFE150DBVR

絲印：2GLW；Package：SOT-23；JFE150 Ultra-Low-Noise, Low-Gate-Current, Audio, N-Channel JFET

1Features ?Ultra-lownoise: –Voltagenoise: ?0.8nV/√Hzat1kHz,IDS=5mA ?0.9nV/√Hzat1kHz,IDS=2mA –Currentnoise:1.8fA/√Hzat1kHz ?Lowgatecurrent:10pA(max) ?Lowinputcapacitance:24pFatVDS=5V ?Highgate-to-drainandgate-to-sourcebreakdown voltage:–4

JFE150DBVT

絲?。?a target="_blank" title="Marking" href="/2glw/marking.html">2GLW；Package：SOT-23；JFE150 Ultra-Low-Noise, Low-Gate-Current, Audio, N-Channel JFET

1Features ?Ultra-lownoise: –Voltagenoise: ?0.8nV/√Hzat1kHz,IDS=5mA ?0.9nV/√Hzat1kHz,IDS=2mA –Currentnoise:1.8fA/√Hzat1kHz ?Lowgatecurrent:10pA(max) ?Lowinputcapacitance:24pFatVDS=5V ?Highgate-to-drainandgate-to-sourcebreakdown voltage:–4

JFE150DCKR

絲?。?a target="_blank" title="Marking" href="/1if/marking.html">1IF；Package：SC70；JFE150 Ultra-Low-Noise, Low-Gate-Current, Audio, N-Channel JFET

1Features ?Ultra-lownoise: –Voltagenoise: ?0.8nV/√Hzat1kHz,IDS=5mA ?0.9nV/√Hzat1kHz,IDS=2mA –Currentnoise:1.8fA/√Hzat1kHz ?Lowgatecurrent:10pA(max) ?Lowinputcapacitance:24pFatVDS=5V ?Highgate-to-drainandgate-to-sourcebreakdown voltage:–4

JFE150DCKT

絲印：1IF；Package：SC70；JFE150 Ultra-Low-Noise, Low-Gate-Current, Audio, N-Channel JFET

1Features ?Ultra-lownoise: –Voltagenoise: ?0.8nV/√Hzat1kHz,IDS=5mA ?0.9nV/√Hzat1kHz,IDS=2mA –Currentnoise:1.8fA/√Hzat1kHz ?Lowgatecurrent:10pA(max) ?Lowinputcapacitance:24pFatVDS=5V ?Highgate-to-drainandgate-to-sourcebreakdown voltage:–4

JFE150DCKR

絲?。?a target="_blank" title="Marking" href="/1if/marking.html">1IF；Package：SC70；JFE150 Ultra-Low Noise, Low Gate Current, Audio, N-Channel JFET

JFE150DCKT

絲?。?a target="_blank" title="Marking" href="/1if/marking.html">1IF；Package：SC70；JFE150 Ultra-Low Noise, Low Gate Current, Audio, N-Channel JFET