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JCS4N60VC-O-I-N-B

N-CHANNELMOSFET

APPLICATIONS HighefficiencyswitchmodepowersuppliesElectroniclampballastsbasedonhalfbridgeUPS FEATURES Lowgatecharge LowCrss(typical14pF) Fastswitching 100avalanchetested Improveddv/dtcapability RoHSproduct

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

JCS4N60VC-O-V-N-B

N-CHANNELMOSFET

APPLICATIONS HighefficiencyswitchmodepowersuppliesElectroniclampballastsbasedonhalfbridgeUPS FEATURES Lowgatecharge LowCrss(typical14pF) Fastswitching 100avalanchetested Improveddv/dtcapability RoHSproduct

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

JCS4N60VE-V-B

JCS4N60E

APPLICATIONS ?Highfrequencyswitching modepowersupply ?Electronicballast ?LEDpowersupply FEATURES ?Lowgatecharge ?LowCrss(typical2.5pF) ?Fastswitching ?100%avalanchetested ?Improveddv/dtcapability ?RoHSproduct

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

JCS4N60V-O-V-N-B

N-CHANNELMOSFET

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

JMP4N60A

JJWJieJie Microelectronics Co., Ltd.

捷捷微江蘇捷捷微電子股份有限公司

PDF上傳者：深圳市溢航科技有限公司

K4N60LV

PowerMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

KF4N60D

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforelectronicballastandswitchingmodepowersupplies. FEATURES ?VDSS=600V,ID=3.2A ?D

KECKEC CORPORATION

KEC株式會社

KF4N60D

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforelectronicballastandswitchingmodepowersupplies. FEATURES ?VDSS=600V,ID=3.2A ?D

KECKEC CORPORATION

KEC株式會社

KF4N60D

PowerMOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ?ComplianttoRoHSdirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

KF4N60D/I

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforelectronicballastandswitchingmodepowersupplies. FEATURES ?VDSS=600V,ID=3.2A ?D

KECKEC CORPORATION

KEC株式會社

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