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JPC817

Currentconversionratio(CTR:minimum50WorkingconditionsIF=5mA,VCE=

JUXINGGuangdong Juxing Electronics Technology Co., Ltd.

廣東鉅興電子廣東鉅興電子科技有限公司

K817

Optocoupler,PhototransistorOutput

FEATURES Endstackableto2.54mm(0.1)spacing DCisolationtestvoltage5000VRMS Currenttransferratio(CTR)selectedinto groups LowtemperaturecoefficientofCTR Wideambienttemperaturerange Availableinsingle,dualandquadchannelpackages Materialcategorization:Fordefinition

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

K817P

Optocoupler,PhototransistorOutput

Description IntheK817P/K827PH/K847PHpartseachchannelconsistofaphototransistoropticallycoupledtoagalliumarsenideinfrared-emittingdiodeina4-pin(single);8pin(dual);16-pin(quad)plasticdualinlinepackage. Theelementsaremountedononeleadframeprovidingafixedd

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

K817P

Optocoupler,PhototransistorOutput

FEATURES Endstackableto2.54mm(0.1)spacing DCisolationtestvoltage5000VRMS Currenttransferratio(CTR)selectedinto groups LowtemperaturecoefficientofCTR Wideambienttemperaturerange Availableinsingle,dualandquadchannelpackages Materialcategorization:Fordefinition

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

K817P..

Optocoupler,PhototransistorOutput

FEATURES Endstackableto2.54mm(0.1)spacing DCisolationtestvoltage5000VRMS Currenttransferratio(CTR)selectedinto groups LowtemperaturecoefficientofCTR Wideambienttemperaturerange Availableinsingle,dualandquadchannelpackages Materialcategorization:Fordefinition

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

KB817

GENERALPURPOSEHIGHISOLATIONVOLTAGESINGLETRANSISTORTYPEPHOTOCOUPLERSERIES

DESCRIPTION 1.TheKB817(1-channel)isopticallycoupledisolatorscontainingaGaASlightemittingdiodeandanNPNsiliconphototransistor. 2.Theleadpitchis2.54mm. 3.Solidinsulationthicknessbetweenemittingdiodeandoutputphototransistor:>=0.6mm. FEATURES 1.Highisolationvolta

KingbrightKingbright Company LLC

今臺(tái)電子今臺(tái)電子股份有限公司

KB817A

GENERALPURPOSEHIGHISOLATIONVOLTAGESINGLETRANSISTORTYPEPHOTOCOUPLERSERIES

DESCRIPTION 1.TheKB817(1-channel)isopticallycoupledisolatorscontainingaGaASlightemittingdiodeandanNPNsiliconphototransistor. 2.Theleadpitchis2.54mm. 3.Solidinsulationthicknessbetweenemittingdiodeandoutputphototransistor:>=0.6mm. FEATURES 1.Highisolationvolta

KingbrightKingbright Company LLC

今臺(tái)電子今臺(tái)電子股份有限公司

KB817AB

GENERALPURPOSEHIGHISOLATIONVOLTAGESINGLETRANSISTORTYPEPHOTOCOUPLERSERIES

DESCRIPTION 1.TheKB817(1-channel)isopticallycoupledisolatorscontainingaGaASlightemittingdiodeandanNPNsiliconphototransistor. 2.Theleadpitchis2.54mm. 3.Solidinsulationthicknessbetweenemittingdiodeandoutputphototransistor:>=0.6mm. FEATURES 1.Highisolationvolta

KingbrightKingbright Company LLC

今臺(tái)電子今臺(tái)電子股份有限公司

KB817A-B

GENERALPURPOSEHIGHISOLATIONVOLTAGESINGLETRANSISTORTYPEPHOTOCOUPLERSERIES

DESCRIPTION 1.TheKB817-B(1-channel)isopticallycoupledisolatorscontainingaGaASlightemittingdiodeandanNPNsiliconphototransistor. 2.Theleadpitchis2.54mm. 3.Solidinsulationthicknessbetweenemittingdiodeandoutputphototransistor:>=0.6mm. FEATURES 1.Leadforming(gull

KingbrightKingbright Company LLC

今臺(tái)電子今臺(tái)電子股份有限公司

KB817AB-B

GENERALPURPOSEHIGHISOLATIONVOLTAGESINGLETRANSISTORTYPEPHOTOCOUPLERSERIES

DESCRIPTION 1.TheKB817-B(1-channel)isopticallycoupledisolatorscontainingaGaASlightemittingdiodeandanNPNsiliconphototransistor. 2.Theleadpitchis2.54mm. 3.Solidinsulationthicknessbetweenemittingdiodeandoutputphototransistor:>=0.6mm. FEATURES 1.Leadforming(gull

KingbrightKingbright Company LLC

今臺(tái)電子今臺(tái)電子股份有限公司

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