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零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
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Currentconversionratio(CTR:minimum50WorkingconditionsIF=5mA,VCE= | JUXINGGuangdong Juxing Electronics Technology Co., Ltd. 廣東鉅興電子廣東鉅興電子科技有限公司 | JUXING | ||
Optocoupler,PhototransistorOutput FEATURES Endstackableto2.54mm(0.1)spacing DCisolationtestvoltage5000VRMS Currenttransferratio(CTR)selectedinto groups LowtemperaturecoefficientofCTR Wideambienttemperaturerange Availableinsingle,dualandquadchannelpackages Materialcategorization:Fordefinition | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
Optocoupler,PhototransistorOutput Description IntheK817P/K827PH/K847PHpartseachchannelconsistofaphototransistoropticallycoupledtoagalliumarsenideinfrared-emittingdiodeina4-pin(single);8pin(dual);16-pin(quad)plasticdualinlinepackage. Theelementsaremountedononeleadframeprovidingafixedd | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
Optocoupler,PhototransistorOutput FEATURES Endstackableto2.54mm(0.1)spacing DCisolationtestvoltage5000VRMS Currenttransferratio(CTR)selectedinto groups LowtemperaturecoefficientofCTR Wideambienttemperaturerange Availableinsingle,dualandquadchannelpackages Materialcategorization:Fordefinition | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
Optocoupler,PhototransistorOutput FEATURES Endstackableto2.54mm(0.1)spacing DCisolationtestvoltage5000VRMS Currenttransferratio(CTR)selectedinto groups LowtemperaturecoefficientofCTR Wideambienttemperaturerange Availableinsingle,dualandquadchannelpackages Materialcategorization:Fordefinition | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
GENERALPURPOSEHIGHISOLATIONVOLTAGESINGLETRANSISTORTYPEPHOTOCOUPLERSERIES DESCRIPTION 1.TheKB817(1-channel)isopticallycoupledisolatorscontainingaGaASlightemittingdiodeandanNPNsiliconphototransistor. 2.Theleadpitchis2.54mm. 3.Solidinsulationthicknessbetweenemittingdiodeandoutputphototransistor:>=0.6mm. FEATURES 1.Highisolationvolta | KingbrightKingbright Company LLC 今臺(tái)電子今臺(tái)電子股份有限公司 | Kingbright | ||
GENERALPURPOSEHIGHISOLATIONVOLTAGESINGLETRANSISTORTYPEPHOTOCOUPLERSERIES DESCRIPTION 1.TheKB817(1-channel)isopticallycoupledisolatorscontainingaGaASlightemittingdiodeandanNPNsiliconphototransistor. 2.Theleadpitchis2.54mm. 3.Solidinsulationthicknessbetweenemittingdiodeandoutputphototransistor:>=0.6mm. FEATURES 1.Highisolationvolta | KingbrightKingbright Company LLC 今臺(tái)電子今臺(tái)電子股份有限公司 | Kingbright | ||
GENERALPURPOSEHIGHISOLATIONVOLTAGESINGLETRANSISTORTYPEPHOTOCOUPLERSERIES DESCRIPTION 1.TheKB817(1-channel)isopticallycoupledisolatorscontainingaGaASlightemittingdiodeandanNPNsiliconphototransistor. 2.Theleadpitchis2.54mm. 3.Solidinsulationthicknessbetweenemittingdiodeandoutputphototransistor:>=0.6mm. FEATURES 1.Highisolationvolta | KingbrightKingbright Company LLC 今臺(tái)電子今臺(tái)電子股份有限公司 | Kingbright | ||
GENERALPURPOSEHIGHISOLATIONVOLTAGESINGLETRANSISTORTYPEPHOTOCOUPLERSERIES DESCRIPTION 1.TheKB817-B(1-channel)isopticallycoupledisolatorscontainingaGaASlightemittingdiodeandanNPNsiliconphototransistor. 2.Theleadpitchis2.54mm. 3.Solidinsulationthicknessbetweenemittingdiodeandoutputphototransistor:>=0.6mm. FEATURES 1.Leadforming(gull | KingbrightKingbright Company LLC 今臺(tái)電子今臺(tái)電子股份有限公司 | Kingbright | ||
GENERALPURPOSEHIGHISOLATIONVOLTAGESINGLETRANSISTORTYPEPHOTOCOUPLERSERIES DESCRIPTION 1.TheKB817-B(1-channel)isopticallycoupledisolatorscontainingaGaASlightemittingdiodeandanNPNsiliconphototransistor. 2.Theleadpitchis2.54mm. 3.Solidinsulationthicknessbetweenemittingdiodeandoutputphototransistor:>=0.6mm. FEATURES 1.Leadforming(gull | KingbrightKingbright Company LLC 今臺(tái)電子今臺(tái)電子股份有限公司 | Kingbright |
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