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零件編號(hào)下載 訂購(gòu)功能描述/絲印制造商 上傳企業(yè)LOGO

IXTY1N80P

N-Channel Enhancement Mode Avalanche Rated

IXYS

IXYS Corporation

KSMD1N80

800VN-ChannelMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

KSMU1N80

800VN-ChannelMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

KSMU1N80

800VN-ChannelMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

MTD1N80E

TMOSPOWERFET1.0AMPERES800VOLTSRDS(on)=12OHM

ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage–blockingcapabilitywithoutdegradingperformanceovertime.InadditionthisadvancedTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignal

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTP1N80E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=1A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=12Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MTP1N80E

TMOSPOWERFET1.0AMPERES800VOLTSRDS(on)=12OHMS

TMOSE-FETPowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage–blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedTMOSE–FETisdesignedtowithstandhi

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

PJP1N80

800VN-ChannelEnhancementModeMOSFET

FEATURES ?1A,800V,RDS(ON)=16?@VGS=10V,ID=0.5A ?LowONResistance ?FastSwitching ?LowGateCharge ?FullyCharacterizedAvalancheVoltageandCurrent ?SpeciallyDesigenedforACAdapter,BatteryChargeandSMPS ?IncompliancewithEURoHs2002/95/ECDirectives

PANJITPan Jit International Inc.

強(qiáng)茂強(qiáng)茂股份有限公司

PJU1N80

800VN-ChannelEnhancementModeMOSFET

FEATURES ?1A,800V,RDS(ON)=16?@VGS=10V,ID=0.5A ?LowONResistance ?FastSwitching ?LowGateCharge ?FullyCharacterizedAvalancheVoltageandCurrent ?SpeciallyDesigenedforACAdapter,BatteryChargeandSMPS ?IncompliancewithEURoHs2002/95/ECDirectives

PANJITPan Jit International Inc.

強(qiáng)茂強(qiáng)茂股份有限公司

SSF1N80D

MainProductCharacteristics

SILIKRONSilikron Semiconductor Co.,LTD.

新硅能微電子新硅能微電子(蘇州)有限公司

詳細(xì)參數(shù)

  • 型號(hào):

    IXTY1N80P

  • 功能描述:

    MOSFET POLAR MOSFET WITH REDUCED RDS 800V 1A

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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IXYS
23+
TO-252
11846
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IXYS
1931+
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18
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IXYS
1809+
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1675
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IXYS
22+
NA
18
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IXYS
22+
TO2523 DPak (2 Leads + Tab) SC
9000
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I
23+
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6000
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IXYS
2022+
TO-252-3,DPak(2 引線 + 接片
38550
全新原裝 支持表配單 中國(guó)著名電子元器件獨(dú)立分銷(xiāo)
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IXYS/艾賽斯
2022+
TO-252
30000
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IXYS/艾賽斯
20+
TO-252
32500
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IXYS(艾賽斯)
23+
N/A
7500
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更多IXTY1N80P供應(yīng)商 更新時(shí)間2025-7-23 14:12:00