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IXTY01N100

High Voltage MOSFET N-Channel, Enhancement Mode

HighVoltageMOSFET N-Channel,EnhancementMode Features ?InternationalstandardpackagesJEDECTO-251AA,TO-252AA ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Fastswitchingtimes Applications ?Levelshifting ?Triggers ?Solidstaterelays ?Currentre

IXTY01N100

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=0.1A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=80Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

IXTY01N100

N通道標(biāo)準(zhǔn)高電壓MOSFET; ? 國際標(biāo)準(zhǔn)包裝\n? 快速切換時間\n? 雪崩評級\n? 堅固的多晶硅柵極單元結(jié)構(gòu)\n? 超低的RDS(on)\n;

IXTY01N100D

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=0.1A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=110Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

IXTY01N100D

N-Channel, Depletion Mode High Voltage MOSFET

HighVoltageMOSFET N-Channel,DepletionMode Features ●NormallyONmode ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicongatecellstructure ●Fastswitchingspeed Applications ●Levelshifting ●Triggers ●Solidstaterelays ●Currentregulators

IXTY01N100D

Power MOSFET

IXTY01N100D

N溝道耗盡型MOSFET; ? “常開”運(yùn)行狀態(tài)\n? 線性模式容限\n? 內(nèi)部標(biāo)準(zhǔn)封裝\n? 擁有UL 94 V-0易燃性認(rèn)證 成型環(huán)氧樹脂\n;

IXTY01N100D_17

Power MOSFET