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MTP3N60

PowerFieldEffectTransistor

PowerFieldEffectTransistor N-ChannelEnhancement-Mode SiliconGateTWOS TheseTMOSPowerFETsaredesignedforhighvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,converters,solenoidandrelaydrivers. ?SiliconGateforFastSwitchingSpeeds—SwitchingTim

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

MTP3N60E

HighEnergyPowerFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTP3N60E

TMOSPOWERFET3.0AMPERES600VOLTSRDS(on)=2.2OHMS

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTP3N60F

N-Channel650V(D-S)MOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDrive Requirement ?ImprovedGate,AvalancheandDynamicdV/dt Ruggedness ?FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent ?ComplianttoRoHSdirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

MTP3N60FI

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=3A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.5Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MTP3N60FI

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=2? ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100oC ■APPLICATIONORIENTEDCHARACTERIZATION APPLICATIONS ■HIGHCURRENT,HIGHSPEEDSWITCHING ■SWITCHMODEPOWERSUPPLIES(SMPS) ■

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

MTP3N60FI

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=2? ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■APPLICATIONORIENTEDCHARACTERIZATION APPLICATIONS ■HIGHCURRENT,HIGHSPEEDSWITCHING ■SWITCHMODEPOWERSUPPLIES(SMPS) ■

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

PHB3N60E

PowerMOStransistorsAvalancheenergyrated

GENERALDESCRIPTION N-channel,enhancementmodefield-effectpowertransistor,intendedforuseinoff-lineswitchedmodepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.c.converters,motorcontrolcircuitsandgeneralpurposeswitchingapplications. ThePHP3N60Eissupp

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

PHP3N60E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=2.8A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.4Ω(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

PHP3N60E

PowerMOStransistorsAvalancheenergyrated

GENERALDESCRIPTION N-channel,enhancementmodefield-effectpowertransistor,intendedforuseinoff-lineswitchedmodepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.c.converters,motorcontrolcircuitsandgeneralpurposeswitchingapplications. ThePHP3N60Eissupp

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

技術(shù)參數(shù)

  • Maximum On-Resistance @ 25 ℃ (Ohm)：

    2.9

  • Continuous Drain Current @ 25 ℃ (A)：

    3

  • Gate Charge (nC)：

    9.8

  • Thermal resistance [junction-case](K/W)：

    1.8

  • Configuration：

    Single

  • Package Type：

    TO-220

  • Typical Reverse Recovery Time (ns)：

    500

  • Power Dissipation (W)：

    70

  • Sample Request：

    No

  • Replaced By Part Number：

    IXTP4N65X2

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IXYS/艾賽斯
17+
TO-220
31518
原裝正品 可含稅交易
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IXYS
24+
TO-220
8866
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IXYS
23+
TO-220-3
11846
一級(jí)代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
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IXYS
23+
TO-220
5000
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IXYS
1822+
TO-220
9852
只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!!
 詢價(jià)
JINGDAO/晶導(dǎo)微
23+
SMC
69820
終端可以免費(fèi)供樣,支持BOM配單!
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IXYS
1931+
N/A
18
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2447
SMD
100500
一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨
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1809+
TO-220
3675
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22+
NA
18
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更多IXTP3N60P供應(yīng)商 更新時(shí)間2025-7-27 14:00:00

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