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MTP3N60E

HighEnergyPowerFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTP3N60E

TMOSPOWERFET3.0AMPERES600VOLTSRDS(on)=2.2OHMS

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTP3N60F

N-Channel650V(D-S)MOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDrive Requirement ?ImprovedGate,AvalancheandDynamicdV/dt Ruggedness ?FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent ?ComplianttoRoHSdirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

MTP3N60FI

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=3A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.5Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTP3N60FI

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=2? ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100oC ■APPLICATIONORIENTEDCHARACTERIZATION APPLICATIONS ■HIGHCURRENT,HIGHSPEEDSWITCHING ■SWITCHMODEPOWERSUPPLIES(SMPS) ■

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

MTP3N60FI

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=2? ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■APPLICATIONORIENTEDCHARACTERIZATION APPLICATIONS ■HIGHCURRENT,HIGHSPEEDSWITCHING ■SWITCHMODEPOWERSUPPLIES(SMPS) ■

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

PHB3N60E

PowerMOStransistorsAvalancheenergyrated

GENERALDESCRIPTION N-channel,enhancementmodefield-effectpowertransistor,intendedforuseinoff-lineswitchedmodepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.c.converters,motorcontrolcircuitsandgeneralpurposeswitchingapplications. ThePHP3N60Eissupp

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

PHP3N60E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=2.8A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.4Ω(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

PHP3N60E

PowerMOStransistorsAvalancheenergyrated

GENERALDESCRIPTION N-channel,enhancementmodefield-effectpowertransistor,intendedforuseinoff-lineswitchedmodepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.c.converters,motorcontrolcircuitsandgeneralpurposeswitchingapplications. ThePHP3N60Eissupp

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

PHX3N60E

PowerMOStransistorsAvalancheenergyrated

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

詳細(xì)參數(shù)

  • 型號(hào)：

    IXTP3N60P

  • 功能描述：

    MOSFET 3 Amps 600V

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

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31518
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23+
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