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MDF3N50

N-ChannelMOSFET500V,2.8A,2.5(ohm)

MGCHIP

MagnaChip Semiconductor.

MTP3N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=3A@TC=25℃ ·DrainSourceVoltage-VDSS=450V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTP3N50

N-Channel650V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

MTP3N50

TMOSPOWERFET3.0AMPERES500VOLTSRDS(on)=3.0OHMS

TMOSE-FET?HighEnergyPowerFET N–ChannelEnhancement–ModeSiliconGate TMOSPOWERFET3.0AMPERES500VOLTSRDS(on)=3.0OHMS ThisadvancedhighvoltageTMOSE–FETisdesignedtowithstandhighenergyintheavalanchemodeandswitchefficiently.Thisnewhighenergydevicealsooffer

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTP3N50E

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTP3N50E

N??hannelEnhancement??odeSiliconGate

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTP3N50E

TMOSPOWERFET3.0AMPERES500VOLTSRDS(on)=3.0OHMS

TMOSE-FET?HighEnergyPowerFET N–ChannelEnhancement–ModeSiliconGate TMOSPOWERFET3.0AMPERES500VOLTSRDS(on)=3.0OHMS ThisadvancedhighvoltageTMOSE–FETisdesignedtowithstandhighenergyintheavalanchemodeandswitchefficiently.Thisnewhighenergydevicealsooffer

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

PHB3N50E

PowerMOStransistorsAvalancheenergyrated

GENERALDESCRIPTION N-channel,enhancementmodefield-effectpowertransistor,intendedforuseinoff-lineswitchedmodepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.c.converters,motorcontrolcircuitsandgeneralpurposeswitchingapplications. ThePHP3N50Eissupplied

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

PHP3N50

N-Channel650V(D-S)MOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDrive Requirement ?ImprovedGate,AvalancheandDynamicdV/dt Ruggedness ?FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent ?ComplianttoRoHSdirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

PHP3N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=3.5A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3Ω(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

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    TO-220

供應(yīng)商型號品牌批號封裝庫存備注價格
IXYS/艾賽斯
17+
TO-220
31518
原裝正品 可含稅交易
 詢價
IXYS
24+
TO-220
351
詢價
IXYS
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費送樣
 詢價
IXYS
23+
TO-220-3
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢價
IXYS
23+
TO-220
5000
專做原裝正品,假一罰百!
 詢價
IXYS
1822+
TO-220
9852
只做原裝正品假一賠十為客戶做到零風(fēng)險!!
 詢價
MENGKE/盟科
23+
TO-252251
69820
終端可以免費供樣,支持BOM配單!
 詢價
IXYS
1931+
N/A
18
加我qq或微信，了解更多詳細(xì)信息,體驗一站式購物
 詢價
IXYS/艾賽斯
2447
TO-220
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
 詢價
IXYS
1809+
TO-220
3675
就找我吧!--邀您體驗愉快問購元件!
 詢價
更多IXTP3N50P供應(yīng)商 更新時間2025-7-27 14:00:00

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