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IXTH90N15T

isc N-Channel MOSFET Transistor

IXTH90N15T

Preliminary Technical Information Trench Gate Power MOSFET N-Channel Enhancement Mode

IXTH90N15T

N-Channel: Trench-Gate Power MOSFETs with HiPerFET? Options; ·Trench Gate MOSFET Technology\n·Break down voltages VDSS: 36V to 300V\n·Current ratings ID25: 12A to 660A\n·Ultra-low on-state resistance RDS(on)\n·Superior avalanche ruggedness\n·Junction temperature TJ up to 175°C\n·International standard packages\n;

IXTK90N15

N-ChannelEnhancementMode

HighCurrentMegaMOS?FET N-ChannelEnhancementMode Features ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Internationalstandardpackage ?Fastswitchingtimes Applications ?Motorcontrols ?DCchoppers ?Switched-modepowersupplies Advantages ?Easyto

IXTK90N15

iscN-ChannelMOSFETTransistor

?FEATURES ?DrainSourceVoltage-:VDSS=150V(Min) ?Staticdrain-sourceon-resistance:RDS(on)≤16m?@VGS=10V ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation ?APPLICATION ?DC/DCConverters ?HighCurrentSwitchingApplication

IXTP90N15T

iscN-ChannelMOSFETTransistor

IXTP90N15T

PreliminaryTechnicalInformationTrenchGatePowerMOSFETN-ChannelEnhancementMode

IXTQ90N15T

PreliminaryTechnicalInformationTrenchGatePowerMOSFETN-ChannelEnhancementMode

IXTQ90N15T

iscN-ChannelMOSFETTransistor