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IXFV12N90P

Polar Power MOSFET HiPerFET

Polar?HiPerFET?PowerMOSFET N-ChannelEnhancementModeAvalancheRated FastIntrinsicDiode Features ?InternationalStandardPackages ?AvalancheRated ?LowPackageInductance ?FastIntrinsicDiode Advantages ?EasytoMount ?SpaceSavings ?HighPowerDensity Applications: ?Sw

IXFV12N90P

Power MOSFET

IXFV12N90P

N-Channel: Power MOSFETs with Fast Intrinsic Diode (HiPerFET?); ·The IXYS most popular Power MOSFETs (HiPerFET?) for both hard switching and resonant mode applications, offering Low gate charge and excellent ruggedness with a fast intrinsic diode. Available in many standard industrial packages including isolated types\n;

IXFV12N90PS

Polar Power MOSFET HiPerFET

Polar?HiPerFET?PowerMOSFET N-ChannelEnhancementModeAvalancheRated FastIntrinsicDiode Features ?InternationalStandardPackages ?AvalancheRated ?LowPackageInductance ?FastIntrinsicDiode Advantages ?EasytoMount ?SpaceSavings ?HighPowerDensity Applications: ?Sw

IXFV12N90PS

Power MOSFET

IXFZ12N90

HIPERFETPowerMOSFTETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXGH12N90C

HiPerFASTIGBTLightspeedSeries

Features ?VeryhighfrequencyIGBT ?NewgenerationHDMOSTMprocess ?InternationalstandardpackageJEDECTO-247 ?Highpeakcurrenthandlingcapability Applications ?PFCcircuit ?ACmotorspeedcontrol ?DCservoandrobotdrives ?Switch-modeandresonant-modepowersupplies ?High

IXGX12N90C

HiPerFASTIGBTLightspeedSeries

IXTH12N90

MegaMOSFET

MegaMOS?FET N-ChannelEnhancementMode Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Lowpackageinductance(

IXTH12N90

iscN-ChannelMOSFETTransistor

DESCRIPTION ?Designedforuseinswitchmodepowersuppliesandgeneralpurposeapplications. FEATURES ?DrainCurrentID=12A@TC=25℃ ?DrainSourceVoltage-:VDSS=900V(Min) ?StaticDrain-SourceOn-Resistance:RDS(on)=0.9Ω(Max) ?100avalanchetested ?MinimumLot-to-Lotvariations