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IXFT12N100Q

HiPerFETTM Power MOSFETs Q Class

Features ●IXYSadvancedlowQgprocess ●Lowgatechargeandcapacitances -easiertodrive -fasterswitching ●Internationalstandardpackages ●LowRDS(on) ●UnclampedInductiveSwitching(UIS)rated ●MoldingepoxiesmeetUL94V-0 flammabilityclassification Advantages ●

IXYS

IXYS Corporation

IXFT12N100Q

N通道HiPerFET MOSFET; ? 國際標(biāo)準(zhǔn)包裝\n? 堅(jiān)固的多晶硅柵極單元結(jié)構(gòu)\n? 適用于非鉗位感應(yīng)開關(guān)（UIS）\n? 快速本征整流器\n;

Littelfuselittelfuse

力特力特公司

IXFT12N100QHV

N通道HiPerFET MOSFET; ? 國際標(biāo)準(zhǔn)包裝\n? 堅(jiān)固的多晶硅柵極單元結(jié)構(gòu)\n? 適用于非鉗位感應(yīng)開關(guān)（UIS）\n? 快速本征整流器\n;

Littelfuselittelfuse

力特力特公司

IXFT12N100QHV

High Voltage Power MOSFET

IXYS

IXYS Corporation

IXFV12N100P

PolarHiPerFETPowerMOSFETs

PolarTMHiPerFET?PowerMOSFETs N-ChannelEnhancementMode AvalancheRated FastIntrinsicRectifier Features ?LowRDS(on)andQG ?AvalancheRated ?LowPackageInductance ?FastIntrinsicRectifier Advantages ?HighPowerDensity ?EasytoMount ?SpaceSavings Applications ?Switc

IXYS

IXYS Corporation

IXFV12N100PS

PolarHiPerFETPowerMOSFETs

PolarTMHiPerFET?PowerMOSFETs N-ChannelEnhancementMode AvalancheRated FastIntrinsicRectifier Features ?LowRDS(on)andQG ?AvalancheRated ?LowPackageInductance ?FastIntrinsicRectifier Advantages ?HighPowerDensity ?EasytoMount ?SpaceSavings Applications ?Switc

IXYS

IXYS Corporation

IXGA12N100

IGBT

Features ?Internationalstandardpackages JEDECTO-220ABandTO-263AA ?SecondgenerationHDMOS?process ?LowVCE(sat) -forminimumon-stateconductionlosses ?MOSGateturn-on -drivesimplicity Applications ?ACmotorspeedcontrol ?DCservoandrobotdrives ?DCchopper

IXYS

IXYS Corporation

IXGA12N100A

IGBT

Features ?Internationalstandardpackages JEDECTO-220ABandTO-263AA ?SecondgenerationHDMOS?process ?LowVCE(sat) -forminimumon-stateconductionlosses ?MOSGateturn-on -drivesimplicity Applications ?ACmotorspeedcontrol ?DCservoandrobotdrives ?DCchopper

IXYS

IXYS Corporation

IXGH12N100

LowVCE(sat)IGBTwithDiodeHighSpeedIGBTwithDiode

Features ?InternationalstandardpackageJEDECTO-247AD ?2ndgenerationHDMOSTMprocess ?LowVCE(sat) -forlowon-stateconductionlosses ?Highcurrenthandlingcapability ?MOSGateturn-on -drivesimplicity ?Voltageratingguaranteedathightemperature(125C) Applicati

IXYS

IXYS Corporation

IXGP12N100

IGBT

Features ?Internationalstandardpackages JEDECTO-220ABandTO-263AA ?SecondgenerationHDMOS?process ?LowVCE(sat) -forminimumon-stateconductionlosses ?MOSGateturn-on -drivesimplicity Applications ?ACmotorspeedcontrol ?DCservoandrobotdrives ?DCchopper

IXYS

IXYS Corporation

技術(shù)參數(shù)

  • Maximum On-Resistance @ 25 ℃ (Ohm)：

    1.05

  • Continuous Drain Current @ 25 ℃ (A)：

    12

  • Gate Charge (nC)：

    90

  • Thermal resistance [junction-case](K/W)：

    0.42

  • Configuration：

    Single

  • Package Type：

    TO-268S

  • Power Dissipation (W)：

    300

  • Maximum Reverse Recovery (ns)：

    200

  • Sample Request：

    No

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
IXYS/艾賽斯
23+
TO-268S
56230
原裝正品 華強(qiáng)現(xiàn)貨
 詢價(jià)
IXYS
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
IXYS
20+
TO-3P
38900
原裝優(yōu)勢(shì)主營型號(hào)-可開原型號(hào)增稅票
 詢價(jià)
IXYS/艾賽斯
23+
TO-268
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
IXYS/艾賽斯
21+
TO-268
10000
原裝現(xiàn)貨假一罰十
 詢價(jià)
IXYS
22+
TO2683 D3Pak (2 Leads + Tab) T
9000
原廠渠道,現(xiàn)貨配單
 詢價(jià)
IXYS
23+
TO2683 D3Pak (2 Leads + Tab) T
9000
原裝正品，支持實(shí)單
 詢價(jià)
IXYS
2022+
TO-268-3,D3Pak(2 引線 + 接片
38550
全新原裝 支持表配單 中國著名電子元器件獨(dú)立分銷
 詢價(jià)
IXYS
23+
64256
##公司主營品牌長(zhǎng)期供應(yīng)100%原裝現(xiàn)貨可含稅提供技術(shù)
 詢價(jià)
IXYS/艾賽斯
24+
NA/
10
優(yōu)勢(shì)代理渠道,原裝正品,可全系列訂貨開增值稅票
 詢價(jià)
更多IXFT12N100Q供應(yīng)商 更新時(shí)間2025-7-29 8:31:00

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