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IXFJ20N85X

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=9.5A@TC=25℃ ·DrainSourceVoltage- :VDSS=850V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=360mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

IXFJ20N85X

N-Channel Enhancement Mode Avalanche Rated

IXFJ20N85X

N通道 超-超級結MOSFET; ? 超低通態(tài)電阻RDS(ON)和柵極電荷Qg\n? 快速體二極管\n? dv/dt強度\n? 雪崩評級\n? 較低的封裝電感\(zhòng)n? 國際標準包裝\n;

IXFP20N85X

iscN-ChannelMOSFETTransistor

IXFP20N85X

X-ClassHiPerFETTM