IXDD415SI屬于集成電路（IC）的柵極驅(qū)動(dòng)器。由艾賽斯制造生產(chǎn)的IXDD415SI柵極驅(qū)動(dòng)器柵極驅(qū)動(dòng)器電源管理集成電路 (PMIC) 可用于提供隔離、放大、參考位移、自舉或其他必要功能，這些功能可將來自電源轉(zhuǎn)換應(yīng)用中控制設(shè)備的信號(hào)連接到電源被控制通過的半導(dǎo)體設(shè)備（通常為 FET 或 IGBT）。任何特定設(shè)備提供的確切功能各不相同，但與它適合驅(qū)動(dòng)的半導(dǎo)體配置相關(guān)。

General Description

The IXDD415 is a dual CMOS high speed high current gate driver specifically designed to drive MOSFETs in Class D and E HF RF applications, as well as other applications requiring ultrafast rise and fall times or short minimum pulse widths. Each output of the IXDD415 can source and sink 15A of peak current while producing voltage rise and fall times of less than 3ns. The outputs of the IXDD415 may be paralleled, producing a single output of up to 30A with comparable rise and fall times. The input of the driver is compatible with TTL or CMOS and is fully immune to latch up over the entire operating range. Designed with small internal delays, cross conduction/current shoot-through is virtually eliminated in the IXDD415. Its features and wide safety margin in operating voltage and power make the IXDD415 unmatched in performance and value.

特性 Features

? Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes

? Latch-Up Protected

? High Peak Output Current: Dual 15A Peak

? Wide Operating Range: 8V to 30V

? Rise And Fall Times of <3ns

? Minimum Pulse Width Of 6ns

? Ability to Disable Output under Faults

? High Capacitive Load

Drive Capability: 4nF in <5ns

? Matched Rise And Fall Times

? 32ns Input To Output Delay Time

? Low Output Impedance

? Low Supply Current

Applications

? Driving RF MOSFETs

? Class D or E Switching Amplifier Drivers

? Multi MHz Switch Mode Power Supplies (SMPS)

? Pulse Generators

? Acoustic Transducer Drivers

? Pulsed Laser Diode Drivers

? DC to DC Converters

? Pulse Transformer Driver