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TDA8510

26WBTLand2x13WSEpoweramplifiers

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

TDA8510J

26WBTLand2x13WSEpoweramplifiers

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

TPCP8510

TransistorSiliconNPNEpitaxialType

High-Speed,High-VoltageSwitchingApplications DC-DCConverterApplications ?HighDCcurrentgain:hFE=120to300(IC=0.1A) ?Lowcollector-emittersaturation:VCE(sat)=0.14V(max) ?High-speedswitching:tf=0.2μs(typ)

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TPCP8510

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TS8510VB

SpecificationofHighPowerIREmittingDiodeChip

DESCRIPTION TS8510VBisahighpowerinfrared,855nmsurfaceemitting diodeinGaAlAstechnologywithhighradiantpowerand highspeed.Polarityconfigurationis“n-up”. ?? GENERALINFORMATION ThedatasheetisbasedonVishayoptoelectronicssampletestingundercertainpredeterminedanda

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

TS8510VB

SpecificationofHighPowerIREmittingDiodeChip

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

TS8510VB

SpecificationofHighPowerIREmittingDiodeChip

DESCRIPTION TS8510VBisahighpowerinfrared,855nmsurfaceemitting diodeinGaAlAstechnologywithhighradiantpowerand highspeed.Polarityconfigurationis“n-up”. FEATURES ?Packagetype:chip ?Packageform:singlechip ?Technology:surfaceemitter ?Dimensionschip(LxWxH

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

TS8510VB-SD-F

SpecificationofHighPowerIREmittingDiodeChip

DESCRIPTION TS8510VBisahighpowerinfrared,855nmsurfaceemitting diodeinGaAlAstechnologywithhighradiantpowerand highspeed.Polarityconfigurationis“n-up”. ?? GENERALINFORMATION ThedatasheetisbasedonVishayoptoelectronicssampletestingundercertainpredeterminedanda

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

TS8510VB-SD-F

SpecificationofHighPowerIREmittingDiodeChip

DESCRIPTION TS8510VBisahighpowerinfrared,855nmsurfaceemitting diodeinGaAlAstechnologywithhighradiantpowerand highspeed.Polarityconfigurationis“n-up”. FEATURES ?Packagetype:chip ?Packageform:singlechip ?Technology:surfaceemitter ?Dimensionschip(LxWxH

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

UFR8510

ULTRAFASTRECOVERYRECTIFIER

MicrosemiMicrosemi Corporation

美高森美美高森美公司

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ITE
23+
TQFP
7000
絕對(duì)全新原裝!100%保質(zhì)量特價(jià)!請(qǐng)放心訂購(gòu)!
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ITE
0601+
QFP
5
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ITE
24+
BGA
1384
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ITE
24+
TQFP-L176P
2560
絕對(duì)原裝!現(xiàn)貨熱賣(mài)!
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ITE
23+
QFP
5000
原裝正品,假一罰十
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ITE
24+
TQFP144
5000
全現(xiàn)原裝公司現(xiàn)貨
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ITE
2007
TQFP176
100
原裝現(xiàn)貨海量庫(kù)存歡迎咨詢
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ITE
22+
LQFP
2000
全新原裝現(xiàn)貨!自家?guī)齑?
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ITE
24+
TQFP
2679
原裝優(yōu)勢(shì)!絕對(duì)公司現(xiàn)貨!可長(zhǎng)期供貨!
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ITE
23+
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8659
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