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零件編號下載 訂購功能描述/絲印制造商 上傳企業(yè)LOGO

MGP20N60U

InsulatedGateBipolarTransistor

InsulatedGateBipolarTransistorN–ChannelEnhancement–ModeSiliconGate ThisInsulatedGateBipolarTransistor(IGBT)usesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.Italsoprovideslowon–voltagewhichresultsinefficientoperationat

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MGW20N60D

InsulatedGateBipolarTransistorwithAnti-ParallelDiode

ThisInsulatedGateBipolarTransistor(IGBT)isco–packagedwithasoftrecoveryultra–fastrectifierandusesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.ShortcircuitratedIGBT’sarespecificallysuitedforapplicationsrequiringaguara

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MHF20N60CT

600VSiliconN-ChannelPowerMOSFET

CITCChip Integration Technology Corporation

竹懋科技竹懋科技股份有限公司

MSAFX20N60A

N-CHANNELENHANCEMENTMODEPOWERMOSFET

Features ?Ultrafastbodydiode ?Ruggedpolysilicongatecellstructure ?IncreasedUnclampedInductiveSwitching(UIS)capability ?Hermeticallysealed,surfacemountpowerpackage ?Lowpackageinductance ?Verylowthermalresistance ?Reversepolarityavailableuponrequest

MicrosemiMicrosemi Corporation

美高森美美高森美公司

MSW20N60

500VN-ChannelMOSFET

BWTECH

Bruckewell Technology LTD

NCE20N60

SuperJunctionMOSFET

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無錫新潔能股份無錫新潔能股份有限公司

NCE20N60F

SuperJunctionMOSFET

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無錫新潔能股份無錫新潔能股份有限公司

P20N60

FastIGBTinNPT-technology75lowerEoffcomparedtopreviousgeneration

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

PCFC20N60W

DESIGN/PROCESSCHANGENOTIFICATION

Description SuperFET?IIMOSFETisFairchildSemiconductor?’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

PSM20N60CT

20A600VSingleN-ChannelPowerMOSFET

PFC

PFC Device Inc.

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210
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68500
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2023+
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45718
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