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ISPP07N60S5

N-Channel MOSFET Transistor

?DESCRIPTION ?Ultralowgatecharge ?Highpeakcurrentcapability ?Improvedtransconductance ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.6? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice perform

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

SPB07N60S5

CoolMOSPowerTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPB07N60S5

CoolMOS??PowerTransistor

CoolMOS?PowerTransistor ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Optimizedcapacitances ?Improvednoiseimmunity

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPB07N60S5

CoolMOS??PowerTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPB07N60S5

N-Channel650V(D-S)PowerMOSFET

FEATURES ?Lowfigure-of-merit(FOM)RonxQg ?Lowinputcapacitance(Ciss) ?Reducedswitchingandconductionlosses ?Ultralowgatecharge(Qg) ?Avalancheenergyrated(UIS) APPLICATIONS ?Serverandtelecompowersupplies ?Switchmodepowersupplies(SMPS) ?Powerfactorcorrection

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

SPB07N60S5

IscN-ChannelMOSFETTransistor

?FEATURES ?WithTo-263(D2PAK)package ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplications

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

SPD07N60S5

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

SPD07N60S5

CoolMOS??PowerTransistor

CoolMOS?PowerTransistor Feature ?Newrevolutionaryhighvoltagetechnology ?WorldwidebestRDS(on)inTO-251andTO-252 ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvedtransconductance ?Pb-freeleadplating;RoHS

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPDU07N60S5

CoolMOS??PowerTransistor

CoolMOS?PowerTransistor ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Optimizedcapacitances ?Improvednoiseimmunity

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPI07N60S5

iscN-ChannelMOSFETTransistor

?DESCRIPTION ?Ultralowgatecharge ?Highpeakcurrentcapability ?Improvedtransconductance ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.6? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice perform

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
PHI
23+
BGA
3000
一級(jí)代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、
 詢價(jià)
IS
23+
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
IS
12
210
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價(jià)
ST
24+
875
詢價(jià)
ST
68500
一級(jí)代理 原裝正品假一罰十價(jià)格優(yōu)勢(shì)長(zhǎng)期供貨
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ST
23+
47403
##公司主營(yíng)品牌長(zhǎng)期供應(yīng)100%原裝現(xiàn)貨可含稅提供技術(shù)
 詢價(jià)
ST
2023+
3000
進(jìn)口原裝現(xiàn)貨
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LATTICE
23+
NA
25060
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
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LAT
23+
65480
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LATTICE
20+
DIP
19570
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開(kāi)原型號(hào)增稅票
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更多ISPP07N60S5供應(yīng)商 更新時(shí)間2025-7-26 11:10:00

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