特性 Features

? Electrically screened to SMD 5962-15228

? ESD protection on all pins. . . . . . . . . . . . . . . . . . . . . .4kV HBM

? Compatible with ISO11898-2

? Operating supply range . . . . . . . . . . . . . . . . . . . . . 3.0V to 3.6V

? Bus pin fault protection to ±20V

? Undervoltage lockout

? Cold spare: powered down devices/nodes will not affect

active devices operating in parallel

? Three selectable driver rise and fall times

? Glitch free bus I/O during power-up and power-down

? Full fail-safe (open, short, terminated/undriven) receiver

? Hi-Z input allows for 120 nodes on the bus

? High data rates. . . . . . . . . . . . . . . . . . . . . . . . . . . . up to 5Mbps

? Quiescent supply current . . . . . . . . . . . . . . 7mA (maximum)

? Listen mode supply current . . . . . . . . . . . . 2mA (maximum)

? -7V to +12V common-mode input voltage range

? 5V tolerant logic inputs

? Thermal shutdown

? Acceptance tested to 75krad(Si) (LDR) wafer-by-wafer

? Radiation tolerance

- SEL/B immune to LETTH . . . . . . . . . . . . 86.4MeV?cm2/mg

- Low dose rate (0.01rad(Si)/s) . . . . . . . . . . . . . . 75krad(Si)

- High dose rate (50-300rad(Si)/s). . . . . . . . . . . 100krad(Si)