特性 Features

? DLA SMD #5962-15219

? Fabricated using P6SOI process technology

- Provides latch-up immunity

? ESD protection 8kV (HBM)

? Rail-to-rail operation

? Overvoltage protection

? Low rON. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .<500Ω (typical)

? Flexible split rail operation

- Positive supply above GND (V+) . . . . . . . +10.8V to +16.5V

- Negative supply below GND (V-) . . . . . . . . -10.8V to -16.5V

? Adjustable logic threshold control with VREF pin

? Cold sparing capable (from ground). . . . . . . . . . . . . . . . .±25V

? Analog overvoltage range (from ground). . . . . . . . . . . . .±35V

? Off switch leakage . . . . . . . . . . . . . . . . . . . 100nA (maximum)

? Transition times (tR, tF) . . . . . . . . . . . . . . . . . . . 500ns (typical)

? Break-before-make switching

? Grounded metal lid (internally connected)

? Operating temperature range. . . . . . . . . . . .-55°C to +125°C

? Radiation acceptance testing

- High dose rate (50-300rad(Si)/s). . . . . . . . . . . 100krad(Si)

- Low dose rate (0.01rad(Si)/s) . . . . . . . . . . . . . 100krad(Si)

NOTE: Product capability established by initial characterization. All

subsequent lots are assurance tested to 50krad (0.01rad(Si)/s)

wafer-by-wafer.

? SEE hardness (see SEE report for details)

- SEB LETTH . . . . . . . . . . . . . . . . . . . . . . . . . 86.4MeV?cm2/mg