特性 Features

? DLA SMD# 5962-15248

? Fabricated using P6 SOI process technology

? Rail-to-rail operation

? No latch-up

? Low rDS(ON). . . . . . . . . . . . . . . . . . . . . . . . . .<120Ω (maximum)

? Single supply operation . . . . . . . . . . . . . . . . . . . . . . 3V to 5.5V

? Adjustable logic threshold control

? Cold sparing capable . . . . . . . . . . . . . . . . . . . . . . . . -0.4V to 7V

? Analog overvoltage range . . . . . . . . . . . . . . . . . . . . -0.4V to 7V

? Switch input off leakage . . . . . . . . . . . . . . . . . . . . . . . . . 120nA

? Transition times (tAHL) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70ns

? Internally grounded metal lid

? Break-before-make switching

? ESD protection ≥5kV (HBM)

? Operating temperature range. . . . . . . . . . . .-55°C to +125°C

? Radiation acceptance testing

- Low dose rate (0.01rad(Si)/s) . . . . . . . . . . . . . . .75krad(Si)

Note: All lots were assurance tested to 75krad

(0.01rad(Si)/s) wafer-by-wafer.

? SEE hardness (see SEE report for details)

- SEL/SEB LETTH (V+ = 6.3V). . . . . . . . . . . . . 60MeV?cm2/mg

Applications

? Telemetry signal processing

? Harsh environments

? Down-hole drilling