特性 Features

? Reference output voltage . . . . . . . . . . . . . . . . . . 3.3V ±0.05%

? Accuracy over temperature . . . . . . . . . . . . . . . . . . . . . ±0.15%

? Accuracy over radiation . . . . . . . . . . . . . . . . . . . . . . . . ±0.25%

? Output voltage noise . . . . . .5.2μVP-P typical (0.1Hz to 10Hz)

? Supply current . . . . . . . . . . . . . . . . . . . . . . . . . 300μA (typical)

? VOS temperature coefficient . . . . . . . . . . 6ppm/°C maximum

? Output current capability . . . . . . . . . . . . . . . . . . .10mA/-5mA

? Line regulation . . . . . . . . . . . . . . . . . . . . . . 5ppm/V maximum

? Load regulation (sourcing) . . . . . . . . . 25ppm/mA maximum

? Operating temperature range. . . . . . . . . . . .-55°C to +125°C

? Radiation environment

- High dose rate (50-300rad(Si)/s) . . . . . . . . . . . 100krad(Si)

- Low dose rate (0.01rad(Si)/s) . . . . . . . . . . . . .100krad(Si)*

- SEL/SEB free (VCC = 36V) . . . . . . . . . . . . 86MeV?cm2/mg

*Product capability established by initial characterization. The

“EH” version is acceptance tested on a wafer-by-wafer basis to

50krad(Si) at low dose rate.

? Electrically screened to SMD 5962-14208