首頁>IS61NLP12836B-200B2LI>規(guī)格書詳情
IS61NLP12836B-200B2LI集成電路（IC）的存儲(chǔ)器規(guī)格書PDF中文資料
| 廠商型號(hào) |
IS61NLP12836B-200B2LI |
| 參數(shù)屬性 | IS61NLP12836B-200B2LI 封裝/外殼為119-BBGA；包裝為托盤；類別為集成電路（IC）的存儲(chǔ)器；產(chǎn)品描述：IC SRAM 4.5MBIT PARALLEL 119PBGA |
| 功能描述 | 128K x 32, 128K x 36, and 256K x 18 STATE BUS SRAM |
| 封裝外殼 | 119-BBGA |
| 文件大小 |
528.09 Kbytes |
| 頁面數(shù)量 |
29 頁 |
| 生產(chǎn)廠商 | ISSI |
| 中文名稱 | 北京矽成 |
| 網(wǎng)址 | |
| 數(shù)據(jù)手冊(cè) | |
| 更新時(shí)間 | 2025-8-8 17:13:00 |
| 人工找貨 | IS61NLP12836B-200B2LI價(jià)格和庫存，歡迎聯(lián)系客服免費(fèi)人工找貨 |
相關(guān)芯片規(guī)格書
更多- IS61NLP12836-5TQI
- IS61NLP12836-5B
- IS61NLP12836
- IS61NLP12836-133B
- IS61NLP12836-5TQ
- IS61NLP12836-133TQ
- IS61NLP12836A
- IS61NLP12836A-250B2
- IS61NLP12836A-200TQI
- IS61NLP12836A-200B3
- IS61NLP12836A-250B3
- IS61NLP12836A-200TQLI
- IS61NLP12836A-200TQ
- IS61NLP12836A-250B2I
- IS61NLP12836A-200B2I
- IS61NLP12836A-250TQ
- IS61NLP12836A-200B3I
- IS61NLP12836A-200B2
IS61NLP12836B-200B2LI規(guī)格書詳情
DESCRIPTION
The 4 Meg NLP/NVP product family feature high-speed, low-power synchronous static RAMs designed to provide a burstable, high-performance, no wait state, device for networking and communications applications. They are organized as 128K words by 32 bits, 128K words by 36 bits, and 256K words by 18 bits, fabricated with ISSIs advanced CMOS technology.
FEATURES
? 100 percent bus utilization
? No wait cycles between Read and Write
? Internal self-timed write cycle
? Individual Byte Write Control
? Single R/W (Read/Write) control pin
? Clock controlled, registered address, data and control
? Interleaved or linear burst sequence control using MODE input
? Three chip enables for simple depth expansion and address pipelining
? Power Down mode
? Common data inputs and data outputs
? CKE pin to enable clock and suspend operation
? JEDEC 100-pin TQFP, 165-ball PBGA and 119- ball PBGA packages
? Power supply:
NVP: Vdd 2.5V (± 5), Vddq 2.5V (± 5)
NLP: Vdd 3.3V (± 5), Vddq 3.3V/2.5V (± 5)
? Industrial temperature available
? Lead-free available
產(chǎn)品屬性
- 產(chǎn)品編號(hào)：
IS61NLP12836B-200B2LI
- 制造商：
ISSI, Integrated Silicon Solution Inc
- 類別：
集成電路（IC） > 存儲(chǔ)器
- 包裝：
托盤
- 存儲(chǔ)器類型：
易失
- 存儲(chǔ)器格式：
SRAM
- 技術(shù)：
SRAM - 同步，SDR
- 存儲(chǔ)容量：
4.5Mb（128K x 36）
- 存儲(chǔ)器接口：
并聯(lián)
- 電壓 - 供電：
3.135V ~ 3.465V
- 工作溫度：
-40°C ~ 85°C（TA）
- 安裝類型：
表面貼裝型
- 封裝/外殼：
119-BBGA
- 供應(yīng)商器件封裝：
119-PBGA（14x22）
- 描述：
IC SRAM 4.5MBIT PARALLEL 119PBGA
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
ISSI, Integrated Silicon Solu |
23+ |
119-PBGA14x22 |
7300 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
ISSI |
23+ |
BGAQFP |
8659 |
原裝公司現(xiàn)貨!原裝正品價(jià)格優(yōu)勢(shì). |
詢價(jià) | ||
ISSI |
23+ |
100-TQFP |
9231 |
詢價(jià) | |||
ISSI |
23+ |
119-BGA(14x22) |
9550 |
專業(yè)分銷產(chǎn)品!原裝正品!價(jià)格優(yōu)勢(shì)! |
詢價(jià) | ||
ISSI, |
25+ |
25000 |
原廠原包 深圳現(xiàn)貨 主打品牌 假一賠百 可開票! |
詢價(jià) | |||
ISSI, Integrated Silicon Solut |
21+ |
54-VFBGA |
5280 |
進(jìn)口原裝!長(zhǎng)期供應(yīng)!絕對(duì)優(yōu)勢(shì)價(jià)格(誠信經(jīng)營 |
詢價(jià) | ||
ISSI |
25+ |
BGA |
16000 |
原裝優(yōu)勢(shì)絕對(duì)有貨 |
詢價(jià) | ||
ISSI |
25+ |
電聯(lián)咨詢 |
7800 |
公司現(xiàn)貨,提供拆樣技術(shù)支持 |
詢價(jià) | ||
ISSI, Integrated Silicon Solut |
24+ |
119-PBGA(14x22) |
56200 |
一級(jí)代理/放心采購 |
詢價(jià) | ||
ISSI |
23+ |
100-TQFP |
65480 |
詢價(jià) |
