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IS61NLF25636集成電路(IC)的存儲器規(guī)格書PDF中文資料

IS61NLF25636
廠商型號

IS61NLF25636

參數(shù)屬性

IS61NLF25636 封裝/外殼為119-BBGA;包裝為托盤;類別為集成電路(IC)的存儲器;產(chǎn)品描述:IC SRAM 9MBIT PARALLEL 119PBGA

功能描述

SRAM

封裝外殼

119-BBGA

文件大小

155.61 Kbytes

頁面數(shù)量

20

生產(chǎn)廠商

ISSI

中文名稱

北京矽成

網(wǎng)址

網(wǎng)址

數(shù)據(jù)手冊

下載地址一下載地址二

更新時間

2025-8-7 23:00:00

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IS61NLF25636規(guī)格書詳情

DESCRIPTION

The 8 Meg NF product family feature high-speed, low-power synchronous static RAMs designed to provide a burstable, high-performance, no wait state, device for network and communications customers. They are organized as 262,144 words by 32 bits, 262,144 words by 36 bits and 524,288 words by 18 bits, fabricated with ISSIs advanced CMOS technology.

Incorporating a no wait state feature, wait cycles are eliminated when the bus switches from read to write, or write to read. This device integrates a 2-bit burst counter, high-speed SRAM core, and high-drive capability outputs into a single monolithic circuit. All synchronous inputs pass through registers are controlled by a positive-edge-triggered single clock input. Operations may be suspended and all synchronous inputs ignored when Clock Enable, CKE is HIGH. In this state the internal device will hold their previous values.

All Read, Write and Deselect cycles are initiated by the ADV input. When the ADV is HIGH the internal burst counter is incremented. New external addresses can be loaded when ADV is LOW.

Write cycles are internally self-timed and are initiated by the rising edge of the clock inputs and when WE is LOW. Separate byte enables allow individual bytes to be written.

A burst mode pin (MODE) defines the order of the burst sequence. When tied HIGH, the interleaved burst sequence is selected. When tied LOW, the linear burst sequence is selected.

FEATURES

? 100 percent bus utilization

? No wait cycles between Read and Write

? Internal self-timed write cycle

? Individual Byte Write Control

? Single R/W (Read/Write) control pin

? Clock controlled, registered address, data and control

? Interleaved or linear burst sequence control using MODE input

? Three chip enables for simple depth expansion and address pipelining for TQFP

? Power Down mode

? Common data inputs and data outputs

? CKE pin to enable clock and suspend operation

? JEDEC 100-pin TQFP, 119 PBGA package

? Single +3.3V power supply (± 5)

? NF Version: 3.3V I/O Supply Voltage

? NLF Version: 2.5V I/O Supply Voltage

? Industrial temperature available

產(chǎn)品屬性

  • 產(chǎn)品編號:

    IS61NLF25636A-7.5B2I-TR

  • 制造商:

    ISSI, Integrated Silicon Solution Inc

  • 類別:

    集成電路(IC) > 存儲器

  • 包裝:

    托盤

  • 存儲器類型:

    易失

  • 存儲器格式:

    SRAM

  • 技術(shù):

    SRAM - 同步,SDR

  • 存儲容量:

    9Mb(256K x 36)

  • 存儲器接口:

    并聯(lián)

  • 電壓 - 供電:

    3.135V ~ 3.465V

  • 工作溫度:

    -40°C ~ 85°C(TA)

  • 安裝類型:

    表面貼裝型

  • 封裝/外殼:

    119-BBGA

  • 供應(yīng)商器件封裝:

    119-PBGA(14x22)

  • 描述:

    IC SRAM 9MBIT PARALLEL 119PBGA

供應(yīng)商 型號 品牌 批號 封裝 庫存 備注 價格
ISSI(美國芯成)
24+
LQFP100(14x20)
7350
現(xiàn)貨供應(yīng),當(dāng)天可交貨!免費(fèi)送樣,原廠技術(shù)支持!!!
詢價
ISSI
24+
NA/
417
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票
詢價
ISSI
21+
TQFP100
7500
全新原裝長期特價銷售
詢價
ISSI
21+
TQFP100
1286
絕對有現(xiàn)貨,不止網(wǎng)上數(shù)量!原裝正品,假一賠十!
詢價
ISSI
2014
TQFP100@
1080
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
詢價
ISSI
2014
TQFP100
417
原裝現(xiàn)貨支持BOM配單服務(wù)
詢價
ISSI, Integrated Silicon Solut
21+
60-TFBGA
5280
進(jìn)口原裝!長期供應(yīng)!絕對優(yōu)勢價格(誠信經(jīng)營
詢價
ISSI
24+
TQFP100
12000
專營ISSI進(jìn)口原裝正品假一賠十可開17增值稅票
詢價
ISSI
2020+
TQFP100
3850
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可
詢價
ISSI
2450+
TQFP100
8850
只做原裝正品假一賠十為客戶做到零風(fēng)險!!
詢價