首頁>IS43DR16640B-3DBL>規(guī)格書詳情
IS43DR16640B-3DBL集成電路(IC)的存儲器規(guī)格書PDF中文資料

廠商型號 |
IS43DR16640B-3DBL |
參數(shù)屬性 | IS43DR16640B-3DBL 封裝/外殼為84-TFBGA;包裝為托盤;類別為集成電路(IC)的存儲器;產(chǎn)品描述:IC DRAM 1G PARALLEL 84TWBGA |
功能描述 | 1Gb (x8, x16) DDR2 SDRAM |
封裝外殼 | 84-TFBGA |
文件大小 |
548.81 Kbytes |
頁面數(shù)量 |
28 頁 |
生產(chǎn)廠商 | Integrated Silicon Solution Inc |
企業(yè)簡稱 |
ISSI【北京矽成】 |
中文名稱 | 北京矽成半導(dǎo)體有限公司官網(wǎng) |
原廠標(biāo)識 | |
數(shù)據(jù)手冊 | |
更新時(shí)間 | 2025-8-4 23:00:00 |
人工找貨 | IS43DR16640B-3DBL價(jià)格和庫存,歡迎聯(lián)系客服免費(fèi)人工找貨 |
相關(guān)芯片規(guī)格書
更多- IS43DR16320
- IS43DR16160A-3DBL
- IS43DR16160A-5BBLI
- IS43DR16160A-3DBI
- IS43DR16160A-3DBLI
- IS43DR16320B-3DBI
- IS43DR16320B-37CBL
- IS43DR16320B-25EBL
- IS43DR16160A-37CBLI
- IS43DR16320B-3DBLI
- IS43DR16320B-25DBL
- IS43DR16160A-37CBL
- IS43DR16320D
- IS43DR16320B-25EBLI
- IS43DR16320B-3DBL
- IS43DR16320B-37CBLI
- IS43DR16320B-25DBLI
- IS43DR16320B-25DBI
IS43DR16640B-3DBL規(guī)格書詳情
FEATURES
? Clock frequency up to 400MHz
? 8 internal banks for concurrent operation
? 4‐bit prefetch architecture
? Programmable CAS Latency: 3, 4, 5, 6 and 7
? Programmable Additive Latency: 0, 1, 2, 3, 4, 5
and 6
? Write Latency = Read Latency‐1
? Programmable Burst Sequence: Sequential or
Interleave
? Programmable Burst Length: 4 and 8
? Automatic and Controlled Precharge Command
? Power Down Mode
? Auto Refresh and Self Refresh
? Refresh Interval: 7.8 ?s (8192 cycles/64 ms)
? ODT (On‐Die Termination)
? Weak Strength Data‐Output Driver Option
? Bidirectional differential Data Strobe (Singleended
data‐strobe is an optional feature)
? On‐Chip DLL aligns DQ and DQs transitions with
CK transitions
? DQS# can be disabled for single‐ended data
strobe
? Read Data Strobe supported (x8 only)
? Differential clock inputs CK and CK#
? VDD and VDDQ = 1.8V ± 0.1V
? PASR (Partial Array Self Refresh)
? SSTL_18 interface
? tRAS lockout supported
? Operating temperature:
Commercial (TA = 0°C to 70°C ; TC = 0°C to 85°C)
Industrial (TA = ‐40°C to 85°C; TC = ‐40°C to 95°C)
Automotive, A1 (TA = ‐40°C to 85°C; TC = ‐40°C to 95°C)
Automotive, A2 (TA = ‐40°C to 105°C; TC = ‐40°C to
105°C)
產(chǎn)品屬性
- 產(chǎn)品編號:
IS43DR16640B-3DBL
- 制造商:
ISSI, Integrated Silicon Solution Inc
- 類別:
集成電路(IC) > 存儲器
- 包裝:
托盤
- 存儲器類型:
易失
- 存儲器格式:
DRAM
- 技術(shù):
SDRAM - DDR2
- 存儲容量:
1Gb(64M x 16)
- 存儲器接口:
并聯(lián)
- 寫周期時(shí)間 - 字,頁:
15ns
- 電壓 - 供電:
1.7V ~ 1.9V
- 工作溫度:
0°C ~ 70°C(TA)
- 安裝類型:
表面貼裝型
- 封裝/外殼:
84-TFBGA
- 供應(yīng)商器件封裝:
84-TWBGA(8x12.5)
- 描述:
IC DRAM 1G PARALLEL 84TWBGA
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
ISSI |
24+ |
NA/ |
2450 |
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價(jià) | ||
ISSI(美國芯成) |
24+ |
BGA84 |
7350 |
現(xiàn)貨供應(yīng),當(dāng)天可交貨!免費(fèi)送樣,原廠技術(shù)支持!!! |
詢價(jià) | ||
ISSI |
20+ |
84-TFBGA |
65790 |
原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價(jià) | ||
ISSI |
23+ |
BGA84 |
12800 |
##公司主營品牌長期供應(yīng)100%原裝現(xiàn)貨可含稅提供技術(shù) |
詢價(jià) | ||
ISSI |
24+ |
BGA-84 |
3685 |
原廠原裝正品現(xiàn)貨,代理渠道,支持訂貨!!! |
詢價(jià) | ||
ISSI |
21+ |
BGA |
9800 |
只做原裝正品假一賠十!正規(guī)渠道訂貨! |
詢價(jià) | ||
ISSI |
23+ |
NA |
32541 |
專業(yè)電子元器件供應(yīng)鏈正邁科技特價(jià)代理特價(jià),原裝元器件供應(yīng),支持開發(fā)樣品 |
詢價(jià) | ||
ISSI |
20+ |
* |
368 |
詢價(jià) | |||
ISSI |
24+ |
BGA84 |
12000 |
專營ISSI進(jìn)口原裝正品假一賠十可開17增值稅票 |
詢價(jià) | ||
ISSI |
24+ |
BGA84 |
13500 |
免費(fèi)送樣原盒原包現(xiàn)貨一手渠道聯(lián)系 |
詢價(jià) |