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首頁>IS43DR16640B-3DBI>規(guī)格書詳情

IS43DR16640B-3DBI集成電路(IC)的存儲器規(guī)格書PDF中文資料

IS43DR16640B-3DBI
廠商型號

IS43DR16640B-3DBI

參數(shù)屬性

IS43DR16640B-3DBI 封裝/外殼為84-TFBGA;包裝為托盤;類別為集成電路(IC)的存儲器;產(chǎn)品描述:IC DRAM 1GBIT PARALLEL 84TWBGA

功能描述

1Gb (x8, x16) DDR2 SDRAM

封裝外殼

84-TFBGA

文件大小

548.81 Kbytes

頁面數(shù)量

28

生產(chǎn)廠商 Integrated Silicon Solution Inc
企業(yè)簡稱

ISSI北京矽成

中文名稱

北京矽成半導(dǎo)體有限公司官網(wǎng)

原廠標(biāo)識
ISSI
數(shù)據(jù)手冊

下載地址一下載地址二

更新時間

2025-8-4 13:58:00

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IS43DR16640B-3DBI價格和庫存,歡迎聯(lián)系客服免費(fèi)人工找貨

IS43DR16640B-3DBI規(guī)格書詳情

FEATURES

? Clock frequency up to 400MHz

? 8 internal banks for concurrent operation

? 4‐bit prefetch architecture

? Programmable CAS Latency: 3, 4, 5, 6 and 7

? Programmable Additive Latency: 0, 1, 2, 3, 4, 5

and 6

? Write Latency = Read Latency‐1

? Programmable Burst Sequence: Sequential or

Interleave

? Programmable Burst Length: 4 and 8

? Automatic and Controlled Precharge Command

? Power Down Mode

? Auto Refresh and Self Refresh

? Refresh Interval: 7.8 ?s (8192 cycles/64 ms)

? ODT (On‐Die Termination)

? Weak Strength Data‐Output Driver Option

? Bidirectional differential Data Strobe (Singleended

data‐strobe is an optional feature)

? On‐Chip DLL aligns DQ and DQs transitions with

CK transitions

? DQS# can be disabled for single‐ended data

strobe

? Read Data Strobe supported (x8 only)

? Differential clock inputs CK and CK#

? VDD and VDDQ = 1.8V ± 0.1V

? PASR (Partial Array Self Refresh)

? SSTL_18 interface

? tRAS lockout supported

? Operating temperature:

Commercial (TA = 0°C to 70°C ; TC = 0°C to 85°C)

Industrial (TA = ‐40°C to 85°C; TC = ‐40°C to 95°C)

Automotive, A1 (TA = ‐40°C to 85°C; TC = ‐40°C to 95°C)

Automotive, A2 (TA = ‐40°C to 105°C; TC = ‐40°C to

105°C)

產(chǎn)品屬性

  • 產(chǎn)品編號:

    IS43DR16640B-3DBI

  • 制造商:

    ISSI, Integrated Silicon Solution Inc

  • 類別:

    集成電路(IC) > 存儲器

  • 包裝:

    托盤

  • 存儲器類型:

    易失

  • 存儲器格式:

    DRAM

  • 技術(shù):

    SDRAM - DDR2

  • 存儲容量:

    1Gb(64M x 16)

  • 存儲器接口:

    并聯(lián)

  • 寫周期時間 - 字,頁:

    15ns

  • 電壓 - 供電:

    1.7V ~ 1.9V

  • 工作溫度:

    -40°C ~ 85°C(TA)

  • 安裝類型:

    表面貼裝型

  • 封裝/外殼:

    84-TFBGA

  • 供應(yīng)商器件封裝:

    84-TWBGA(8x12.5)

  • 描述:

    IC DRAM 1GBIT PARALLEL 84TWBGA

供應(yīng)商 型號 品牌 批號 封裝 庫存 備注 價格
ISSI
2020+
BGA
1045
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
詢價
ISSI
2450+
BGA
6540
只做原裝正品假一賠十為客戶做到零風(fēng)險!!
詢價
ISSI, Integrated Silicon Solu
23+
84-TWBGA8x12.5
7300
專注配單,只做原裝進(jìn)口現(xiàn)貨
詢價
ISSI Integrated Silicon Soluti
22+
84TWBGA (8x12.5)
9000
原廠渠道,現(xiàn)貨配單
詢價
ISSI
24+
BGA
9600
原裝現(xiàn)貨,優(yōu)勢供應(yīng),支持實單!
詢價
ISSI/芯成
24+
BGA
22055
鄭重承諾只做原裝進(jìn)口現(xiàn)貨
詢價
ISSI, Integrated Silicon Solut
21+
119-BGA
5280
進(jìn)口原裝!長期供應(yīng)!絕對優(yōu)勢價格(誠信經(jīng)營
詢價
ISSI
2016+
BGA
4309
本公司只做原裝,假一罰十,可開17%增值稅發(fā)票!
詢價
ISSI
21+
BGA
12588
原裝正品,自己庫存 假一罰十
詢價
ISSI
23+
BGA
10000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
詢價