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IS43DR16640B-25EBLI集成電路(IC)的存儲(chǔ)器規(guī)格書PDF中文資料

廠商型號(hào) |
IS43DR16640B-25EBLI |
參數(shù)屬性 | IS43DR16640B-25EBLI 封裝/外殼為84-TFBGA;包裝為卷帶(TR);類別為集成電路(IC)的存儲(chǔ)器;產(chǎn)品描述:IC DRAM 1GBIT PARALLEL 84TWBGA |
功能描述 | 1Gb (x8, x16) DDR2 SDRAM |
封裝外殼 | 84-TFBGA |
文件大小 |
548.81 Kbytes |
頁(yè)面數(shù)量 |
28 頁(yè) |
生產(chǎn)廠商 | Integrated Silicon Solution Inc |
企業(yè)簡(jiǎn)稱 |
ISSI【北京矽成】 |
中文名稱 | 北京矽成半導(dǎo)體有限公司官網(wǎng) |
原廠標(biāo)識(shí) | |
數(shù)據(jù)手冊(cè) | |
更新時(shí)間 | 2025-8-4 13:42:00 |
人工找貨 | IS43DR16640B-25EBLI價(jià)格和庫(kù)存,歡迎聯(lián)系客服免費(fèi)人工找貨 |
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IS43DR16640B-25EBLI規(guī)格書詳情
FEATURES
? Clock frequency up to 400MHz
? 8 internal banks for concurrent operation
? 4‐bit prefetch architecture
? Programmable CAS Latency: 3, 4, 5, 6 and 7
? Programmable Additive Latency: 0, 1, 2, 3, 4, 5
and 6
? Write Latency = Read Latency‐1
? Programmable Burst Sequence: Sequential or
Interleave
? Programmable Burst Length: 4 and 8
? Automatic and Controlled Precharge Command
? Power Down Mode
? Auto Refresh and Self Refresh
? Refresh Interval: 7.8 ?s (8192 cycles/64 ms)
? ODT (On‐Die Termination)
? Weak Strength Data‐Output Driver Option
? Bidirectional differential Data Strobe (Singleended
data‐strobe is an optional feature)
? On‐Chip DLL aligns DQ and DQs transitions with
CK transitions
? DQS# can be disabled for single‐ended data
strobe
? Read Data Strobe supported (x8 only)
? Differential clock inputs CK and CK#
? VDD and VDDQ = 1.8V ± 0.1V
? PASR (Partial Array Self Refresh)
? SSTL_18 interface
? tRAS lockout supported
? Operating temperature:
Commercial (TA = 0°C to 70°C ; TC = 0°C to 85°C)
Industrial (TA = ‐40°C to 85°C; TC = ‐40°C to 95°C)
Automotive, A1 (TA = ‐40°C to 85°C; TC = ‐40°C to 95°C)
Automotive, A2 (TA = ‐40°C to 105°C; TC = ‐40°C to
105°C)
產(chǎn)品屬性
- 產(chǎn)品編號(hào):
IS43DR16640B-25EBLI
- 制造商:
ISSI, Integrated Silicon Solution Inc
- 類別:
集成電路(IC) > 存儲(chǔ)器
- 包裝:
卷帶(TR)
- 存儲(chǔ)器類型:
易失
- 存儲(chǔ)器格式:
DRAM
- 技術(shù):
SDRAM - DDR2
- 存儲(chǔ)容量:
1Gb(64M x 16)
- 存儲(chǔ)器接口:
并聯(lián)
- 寫周期時(shí)間 - 字,頁(yè):
15ns
- 電壓 - 供電:
1.7V ~ 1.9V
- 工作溫度:
-40°C ~ 85°C(TA)
- 安裝類型:
表面貼裝型
- 封裝/外殼:
84-TFBGA
- 供應(yīng)商器件封裝:
84-TWBGA(8x12.5)
- 描述:
IC DRAM 1GBIT PARALLEL 84TWBGA
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
ISSI, |
25+ |
25000 |
原廠原包 深圳現(xiàn)貨 主打品牌 假一賠百 可開票! |
詢價(jià) | |||
ISSI, Integrated Silicon Solu |
23+ |
84-TWBGA8x12.5 |
7300 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
ISSI Integrated Silicon Soluti |
22+ |
84TWBGA (8x12.5) |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價(jià) | ||
ISSI |
24+ |
BGA |
9600 |
原裝現(xiàn)貨,優(yōu)勢(shì)供應(yīng),支持實(shí)單! |
詢價(jià) | ||
ISSI/芯成 |
24+ |
BGA |
22055 |
鄭重承諾只做原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
ISSI, Integrated Silicon Solut |
21+ |
BGA |
5280 |
進(jìn)口原裝!長(zhǎng)期供應(yīng)!絕對(duì)優(yōu)勢(shì)價(jià)格(誠(chéng)信經(jīng)營(yíng) |
詢價(jià) | ||
ISSI |
23+ |
BGA |
10000 |
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種 |
詢價(jià) | ||
ISSI, Integrated Silicon Solu |
23+ |
84-TWBGA8x12.5 |
7300 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
ISSI |
2447 |
BGA |
100500 |
一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨 |
詢價(jià) | ||
ISSI |
23+ |
BGA |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) |