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首頁(yè)>IS43DR16640B-25EBLI>規(guī)格書詳情

IS43DR16640B-25EBLI集成電路(IC)的存儲(chǔ)器規(guī)格書PDF中文資料

IS43DR16640B-25EBLI
廠商型號(hào)

IS43DR16640B-25EBLI

參數(shù)屬性

IS43DR16640B-25EBLI 封裝/外殼為84-TFBGA;包裝為卷帶(TR);類別為集成電路(IC)的存儲(chǔ)器;產(chǎn)品描述:IC DRAM 1GBIT PARALLEL 84TWBGA

功能描述

1Gb (x8, x16) DDR2 SDRAM

封裝外殼

84-TFBGA

文件大小

548.81 Kbytes

頁(yè)面數(shù)量

28 頁(yè)

生產(chǎn)廠商 Integrated Silicon Solution Inc
企業(yè)簡(jiǎn)稱

ISSI北京矽成

中文名稱

北京矽成半導(dǎo)體有限公司官網(wǎng)

原廠標(biāo)識(shí)
ISSI
數(shù)據(jù)手冊(cè)

下載地址一下載地址二

更新時(shí)間

2025-8-4 13:42:00

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IS43DR16640B-25EBLI價(jià)格和庫(kù)存,歡迎聯(lián)系客服免費(fèi)人工找貨

IS43DR16640B-25EBLI規(guī)格書詳情

FEATURES

? Clock frequency up to 400MHz

? 8 internal banks for concurrent operation

? 4‐bit prefetch architecture

? Programmable CAS Latency: 3, 4, 5, 6 and 7

? Programmable Additive Latency: 0, 1, 2, 3, 4, 5

and 6

? Write Latency = Read Latency‐1

? Programmable Burst Sequence: Sequential or

Interleave

? Programmable Burst Length: 4 and 8

? Automatic and Controlled Precharge Command

? Power Down Mode

? Auto Refresh and Self Refresh

? Refresh Interval: 7.8 ?s (8192 cycles/64 ms)

? ODT (On‐Die Termination)

? Weak Strength Data‐Output Driver Option

? Bidirectional differential Data Strobe (Singleended

data‐strobe is an optional feature)

? On‐Chip DLL aligns DQ and DQs transitions with

CK transitions

? DQS# can be disabled for single‐ended data

strobe

? Read Data Strobe supported (x8 only)

? Differential clock inputs CK and CK#

? VDD and VDDQ = 1.8V ± 0.1V

? PASR (Partial Array Self Refresh)

? SSTL_18 interface

? tRAS lockout supported

? Operating temperature:

Commercial (TA = 0°C to 70°C ; TC = 0°C to 85°C)

Industrial (TA = ‐40°C to 85°C; TC = ‐40°C to 95°C)

Automotive, A1 (TA = ‐40°C to 85°C; TC = ‐40°C to 95°C)

Automotive, A2 (TA = ‐40°C to 105°C; TC = ‐40°C to

105°C)

產(chǎn)品屬性

  • 產(chǎn)品編號(hào):

    IS43DR16640B-25EBLI

  • 制造商:

    ISSI, Integrated Silicon Solution Inc

  • 類別:

    集成電路(IC) > 存儲(chǔ)器

  • 包裝:

    卷帶(TR)

  • 存儲(chǔ)器類型:

    易失

  • 存儲(chǔ)器格式:

    DRAM

  • 技術(shù):

    SDRAM - DDR2

  • 存儲(chǔ)容量:

    1Gb(64M x 16)

  • 存儲(chǔ)器接口:

    并聯(lián)

  • 寫周期時(shí)間 - 字,頁(yè):

    15ns

  • 電壓 - 供電:

    1.7V ~ 1.9V

  • 工作溫度:

    -40°C ~ 85°C(TA)

  • 安裝類型:

    表面貼裝型

  • 封裝/外殼:

    84-TFBGA

  • 供應(yīng)商器件封裝:

    84-TWBGA(8x12.5)

  • 描述:

    IC DRAM 1GBIT PARALLEL 84TWBGA

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫(kù)存 備注 價(jià)格
ISSI,
25+
25000
原廠原包 深圳現(xiàn)貨 主打品牌 假一賠百 可開票!
詢價(jià)
ISSI, Integrated Silicon Solu
23+
84-TWBGA8x12.5
7300
專注配單,只做原裝進(jìn)口現(xiàn)貨
詢價(jià)
ISSI Integrated Silicon Soluti
22+
84TWBGA (8x12.5)
9000
原廠渠道,現(xiàn)貨配單
詢價(jià)
ISSI
24+
BGA
9600
原裝現(xiàn)貨,優(yōu)勢(shì)供應(yīng),支持實(shí)單!
詢價(jià)
ISSI/芯成
24+
BGA
22055
鄭重承諾只做原裝進(jìn)口現(xiàn)貨
詢價(jià)
ISSI, Integrated Silicon Solut
21+
BGA
5280
進(jìn)口原裝!長(zhǎng)期供應(yīng)!絕對(duì)優(yōu)勢(shì)價(jià)格(誠(chéng)信經(jīng)營(yíng)
詢價(jià)
ISSI
23+
BGA
10000
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
詢價(jià)
ISSI, Integrated Silicon Solu
23+
84-TWBGA8x12.5
7300
專注配單,只做原裝進(jìn)口現(xiàn)貨
詢價(jià)
ISSI
2447
BGA
100500
一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨
詢價(jià)
ISSI
23+
BGA
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價(jià)