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首頁>IS41LV16400-50TI>規(guī)格書詳情

IS41LV16400-50TI中文資料矽成半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書

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廠商型號(hào)

IS41LV16400-50TI

功能描述

4Mx16 (64-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

文件大小

143.62 Kbytes

頁面數(shù)量

19

生產(chǎn)廠商

ISSI

中文名稱

矽成半導(dǎo)體

網(wǎng)址

網(wǎng)址

數(shù)據(jù)手冊(cè)

下載地址一下載地址二

更新時(shí)間

2025-9-23 20:34:00

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IS41LV16400-50TI規(guī)格書詳情

DESCRIPTION

The ISSI IS41LV16400 is 4,194,304 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes the IS41LV16400 ideal for use in 16-bit wide data bus systems.

FEATURES

? Extended Data-Out (EDO) Page Mode access cycle

? TTL compatible inputs and outputs; tristate I/O

? Refresh Interval: 4,096 cycles / 64 ms

? Auto refresh Mode: RAS-Only, CAS-before-RAS (CBR), and Hidden

? Low Standby power dissipation:

– 1.8mW(max) CMOS Input Level

? Single power supply: 3.3V ± 10

? Byte Write and Byte Read operation via two CAS

? Extended Temperature Range -30oC to 85oC

? Industrail Temperature Range -40oC to 85oC

產(chǎn)品屬性

  • 型號(hào):

    IS41LV16400-50TI

  • 制造商:

    ISSI

  • 制造商全稱:

    Integrated Silicon Solution, Inc

  • 功能描述:

    4Mx16(64-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫存 備注 價(jià)格
ISSI
三年內(nèi)
1983
只做原裝正品
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24+
SOJ24
20000
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23+
QFP100
35890
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2450+
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INTEGRATEDS
23+
原廠封裝
9888
專做原裝正品,假一罰百!
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25+23+
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47108
絕對(duì)原裝正品現(xiàn)貨,全新深圳原裝進(jìn)口現(xiàn)貨
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22+
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8000
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4
公司優(yōu)勢(shì)庫存 熱賣中!!
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24+
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10
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12
全新原裝 貨期兩周
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