描述 Description

The radiation hardened IS-2100ARH, IS-2100AEH are high frequency, 130V half bridge N-Channel MOSFET driver ICs, which are functionally similar to industry standard 2110 types. The low-side and high-side gate drivers are independently controlled. This gives the user maximum flexibility in dead time selection and driver protocol.
In addition, the devices have on-chip error detection and correction circuitry, which monitors the state of the high-side latch and compares it to the HIN signal. If they disagree, a set or reset pulse is generated to correct the high-side latch. This feature protects the high-side latch from single event upsets (SEUs).

特性 Features

? Electrically screened to DLA SMD # 5962-99536
? QML qualified per MIL-PRF-38535 requirements
? Radiation environment
? Maximum total dose: 300krad(Si)
? DI RSG process provides latch-up immunity
? SEU rating: 82MeV/mg/cm2
? Vertical device architecture reduces sensitivity to low dose rates
? Bootstrap supply maximum voltage to 150V
? Drives 1000pF load at 1MHz with rise and fall times of 30ns (typical)
? 1.5A (typical) peak output current
? Independent inputs for non-half bridge topologies
? Low DC power consumption: 60mW (typical)
? Operates with VDD = VCC over 12V to 20V range
? Low-side supply undervoltage protection

應(yīng)用 Application

? High frequency switch-mode power supplies
? Drivers for inductive loads
? DC motor drivers