描述 Description

600 V half-bridge gate driver IC? for?IGBTs?and?MOSFETs with typical 0.22 A source and 0.48 A sink currents in 14-Lead SOIC package with level-shift technology. The IRS2890DS integrates over current protection and fault reporting.

特性 Features

? Floating channel designed for bootstrap operation
? Fully operational to +600 V
? Tolerant to negative transient voltage, dV/dt immune
? Gate drive supply range from 10 V to 20 V
? Undervoltage lockout for both channels
? 3.3 V, 5 V, and 15 V input logic compatible
? Matched propagation delay for both channels
? Lower di/dt gate driver for better noise immunity
? Outputs in phase with inputs
? Integrated bootstrap functionality
? Suitable for both trapezoidal and sinusoidal motor control
? Overcurrent protection and fault reporting
? Advanced input filter
? Integrated deadtime protection
? Shoot-through (cross-conduction) protection
? Adjustable fault clear timing

優(yōu)勢:
? High power density is achieved by integrating overcurrent protection, fault reporting, fault clear function, bootstrap FET, undervoltage lockout protection, and shoot-through protection
? Increased device reliability due to rugged hard switching performance and high power capability

簡介

IRS2890DS屬于集成電路（IC）的柵極驅(qū)動器。由制造生產(chǎn)的IRS2890DS柵極驅(qū)動器柵極驅(qū)動器電源管理集成電路 (PMIC) 可用于提供隔離、放大、參考位移、自舉或其他必要功能，這些功能可將來自電源轉(zhuǎn)換應(yīng)用中控制設(shè)備的信號連接到電源被控制通過的半導(dǎo)體設(shè)備（通常為 FET 或 IGBT）。任何特定設(shè)備提供的確切功能各不相同，但與它適合驅(qū)動的半導(dǎo)體配置相關(guān)。