描述 Description

The IRS2181/IRS21814 are high voltage, high speed power MOSFET and IGBT drivers with independent high-side and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3 V logi c. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Thefloating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600 V.

特性 Features

· Fl oati ng channel desi gned for bootstrap operati on

· Fully operational to +600V

· Tolerant to negative transient voltage, dV/dt immune

· Gate drive supply range from 10 V to 20V

· Undervoltage lockout for both channels

· 3.3 V and 5 V input logic compatible

· Matched propagation delay for both channels

· L ogic and power ground +/- 5 V offset

· L ower di/dt gate driver for better noise immunity

· Output source/sink current capability 1.4 A/1.8A

· RoHS compliant