描述 Description

The IRS2110/IRS2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic in puts are compatible with standard CMOS or LSTTL output, down to 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are

matched to simplify use in high frequency applications.

The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 500 V or 600 V.

特性 Features

?Floating channel designed for bootstrap operation

?Fully operational to +500 V or +600 V

?Tolerant to negative transient voltage, dV/dt immune

?Gate drive supply range from 10 V to 20 V

?Undervoltage lockout for both channels

?3.3 V logic compatible

?Separate logic supply range from 3.3 V to 20 V

?Logic and power ground ±5V offset

?CMOS Schmitt-triggered inputs with pull-down

?Cycle by cycle edge-triggered shutdown logic

?Matched propagation delay for both channels

?Outputs in phase with inputs