DESCRIPTION

Third generation Power MOSFETs from Vishay provides the designer with the best combination of fast switching, ruggedized device design,? low on-resistance and cost effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.

FEATURES

? Dynamic dV/dt Rating

? Logic-Level Gate Drive

?RDS(on)Specified at VGS= 4 V and 5 V

? 175 °C Operating Temperature

?Fast Switching

? Ease of Paralleling

? Simple Drive Requirements

? Compliant to RoHS Directive 2002/95/EC