IRLR3303中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書
IRLR3303規(guī)格書詳情
描述 Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
? Logic-Level Gate Drive
? Ultra Low On-Resistance
? Surface Mount (IRLR3303)
? Straight Lead (IRLU3303)
? Advanced Process Technology
? Fast Switching
? Fully Avalanche Rated
產(chǎn)品屬性
- 型號:
IRLR3303
- 功能描述:
MOSFET N-CH 30V 35A DPAK
- RoHS:
否
- 類別:
分離式半導體產(chǎn)品 >> FET - 單
- 系列:
HEXFET®
- 標準包裝:
1,000
- 系列:
MESH OVERLAY™ FET
- 型:
MOSFET N 通道,金屬氧化物 FET
- 特點:
邏輯電平門
- 漏極至源極電壓(Vdss):
200V 電流 - 連續(xù)漏極(Id) @ 25°
- C:
18A 開態(tài)Rds(最大)@ Id, Vgs @ 25°
- C:
180 毫歐 @ 9A,10V Id 時的
- Vgs(th)(最大):
4V @ 250µA 閘電荷(Qg) @
- Vgs:
72nC @ 10V 輸入電容(Ciss) @
- Vds:
1560pF @ 25V 功率 -
- 最大:
40W
- 安裝類型:
通孔
- 封裝/外殼:
TO-220-3 整包
- 供應(yīng)商設(shè)備封裝:
TO-220FP
- 包裝:
管件
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
IR |
25+23+ |
SOT252 |
22905 |
絕對原裝正品現(xiàn)貨,全新深圳原裝進口現(xiàn)貨 |
詢價 | ||
IR |
23+ |
TO-252 |
35890 |
詢價 | |||
IR |
22+ |
D-pak |
8000 |
原裝正品支持實單 |
詢價 | ||
IR |
24+ |
TO-252 |
501059 |
免費送樣原盒原包現(xiàn)貨一手渠道聯(lián)系 |
詢價 | ||
IR |
25+ |
TO-252 |
4500 |
全新原裝、誠信經(jīng)營、公司現(xiàn)貨銷售 |
詢價 | ||
IR |
24+ |
D-pak |
20000 |
只做原廠渠道 可追溯貨源 |
詢價 | ||
IR |
24+ |
TO-252 |
25136 |
詢價 | |||
ir |
24+ |
N/A |
6980 |
原裝現(xiàn)貨,可開13%稅票 |
詢價 | ||
IOR |
25+ |
TO-252 |
2987 |
絕對全新原裝現(xiàn)貨供應(yīng)! |
詢價 | ||
IR |
24+ |
TO-252 |
27500 |
原裝正品,價格最低! |
詢價 |