首頁(yè)>IRLR/U2905>規(guī)格書詳情
IRLR/U2905中文資料IRF數(shù)據(jù)手冊(cè)PDF規(guī)格書
| 廠商型號(hào) |
IRLR/U2905 |
| 功能描述 | HEXFET Power MOSFET |
| 文件大小 |
135.08 Kbytes |
| 頁(yè)面數(shù)量 |
10 頁(yè) |
| 生產(chǎn)廠商 | IRF |
| 網(wǎng)址 | |
| 數(shù)據(jù)手冊(cè) | |
| 更新時(shí)間 | 2025-9-3 15:01:00 |
| 人工找貨 | IRLR/U2905價(jià)格和庫(kù)存，歡迎聯(lián)系客服免費(fèi)人工找貨 |
IRLR/U2905規(guī)格書詳情
描述 Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
? Logic-Level Gate Drive
? Ultra Low On-Resistance
? Surface Mount (IRLR2905)
? Straight Lead (IRLU2905)
? Advanced Process Technology
? Fast Switching
? Fully Avalanche Rated
