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IRLI630GPBF中文資料威世科技數(shù)據(jù)手冊PDF規(guī)格書
IRLI630GPBF規(guī)格書詳情
VDS (V) 200
RDS(on) (Ω) VGS = 5.0 V 0.40
Qg (Max.) (nC) 40
Qgs (nC) 5.5
Qgd (nC) 24
Configuration Single
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing.
FEATURES
? Isolated Package
? High Voltage Isolation = 2.5 kVRMS (t = 60 s;f = 60 Hz)
? Sink to Lead Creepage Distance = 4.8 mm
? Logic-Level Gate Drive
? RDS(on) Specified at VGS = 4 V and 5V
? Fast Switching
? Ease of paralleling
? Lead (Pb)-free Available
產(chǎn)品屬性
- 型號：
IRLI630GPBF
- 功能描述：
MOSFET N-Chan 200V 6.2 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導通）：
0.014 Ohms
- 配置：
Single
- 安裝風格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
2018+ |
TO-220 |
11256 |
只做進口原裝正品!假一賠十! |
詢價 | ||
SILICONIX (VISHAY) |
23+ |
原廠原封 |
1000 |
訂貨1周 原裝正品 |
詢價 | ||
VB |
21+ |
TO-220F |
10000 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
I |
25+ |
TO-TO-220F |
12300 |
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證 |
詢價 | ||
IR |
25+23+ |
TO-220 |
12367 |
絕對原裝正品全新進口深圳現(xiàn)貨 |
詢價 | ||
IR |
23+ |
TO-220F |
35890 |
詢價 | |||
VishayIR |
24+ |
TO-220F |
885 |
詢價 | |||
SILICONIXVISHAY |
22+ |
N/A |
12245 |
現(xiàn)貨,原廠原裝假一罰十! |
詢價 | ||
IR |
17+ |
TO-220F |
6200 |
詢價 | |||
IR |
23+24 |
TO-220F |
59630 |
主營原裝MOS,二三級管,肖特基,功率場效應管 |
詢價 |
